Data
sheet
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Thinking RF solutions
MESFET for OPTO
Receivers
Performance Optimised to provide high gm
and low gate leakage
The P35-1110 is a high performance MESFET optimised for
high gm and low gate leakage. This performance makes the
device suitable for use in opto receivers and as a
Transimpedance amplifier for use in wide band PIN FET
receivers. It is available as either a chip or in a MICRO-X
package.
The die is fabricated using Bookham's Gallium Arsenide FET
process. It is fully protected using Silicon Nitride passivation
for excellent performance and reliability.
Features
General purpose amplifier in PIN
FET receiver
Transimpedance amplifier for
wide band PIN FET receiver
High gm, typically 45mS
Low gate leakage current,
typically 10nA at -5 Volts
No selection required
Low Cgs, typically 0.4pF
Simplified bonding
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Parameter Conditions
Min
Typ
Max
Units
Drain Current Idss
Vds = 3V, Vgs = 0V
20
35
60
mA
Pinch Off Voltage Vp
Vds = 3V, Igs = 100 A
-0.5
-1.0
-4.0
V
Transconductance gm
1
Vds = 3V, Ids = 10mA
40
45
50
mS
Gate to Source Leakage Igs
1
Vds = 0V, Vgs = -5V
-
10
80
nA
Vds = 3V, Ids = 10mA
-
0.5
10
nA
Electrical Performance
Ambient temperature = 22 3 C , Vd = 3V
Typical Characteristics at 22 C
60
40
20
0
0 1 2 3
Drain C
urrent, mA
Drain Voltage, Volts
Ids V Vds Vgstep = -0.25V
80
60
40
20
Transconductance, mS
Drain Current, mA
Gm V Ids Vds = 3.0V
40 30 20 10 0
9
6
3
0
0 -2 -4 -6
Gate Current, nA
Gate Voltage, Volts
Igs V Vgs Vds = O/C
0.9
0.6
0.3
0
Gate Current, nA
Drain Current, mA
Igs V Vgs Vds = 3.0V
5 10 15 20 25
-20 0 20 40 60 80 100 120
Gm at 10mA,
mS
Temperature (Deg C)
Transconductance, Gm V Temperature
50
48
46
44
42
40
38
36
0.055mS/
o
C
-20 0 20 40 60 80 100 120
Gate Leakage (Ids = 10mA) V Temperature
Temperature (Deg C)
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
Gate Leakage, nA
Notes
1. Measured under dark conditions
P35-1110
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P35-1110-0 (Chip) Equivalent Circuit model
(Source bond wires included)
Absolute maximum Ratings
Max Vds
+6.0V
Max Vgs
-6.0V
Operating temperature
-55C to 125C
Channel temperature
175C
Total power dissipation
350mW
Chip Mounting and Bonding
The back of the chip is metallized with Au-Ge and can be die-attached onto gold manually, eutectically with a Au-Sn
preform or with low temperature epoxy. The maximum allowable chip temperature is 280 C. The chip is fully
passivated with silicon nitride and should be bonded onto the exposed gold pads with 25 micron diameter pure gold
wire, 0.5 - 2.0% elongation. Bonding should be achieved with the chip face at 250-270 C with a heated wedge
(approx. 120 C) and a force of 25 grams. Ball bonds are not recommended as resultant gold area can come too close
to the channel vicinity, increasing the probability of device destruction due to transients.
Handling Precautions
The microwave FET can be damaged or destroyed if subject to large transient voltages, such as can be generated by
some bonding equipment power supplies when switched on, or if the output is shorted. It is also possible to induce large
spikes from other equipment into long unscreened bias leads.
Gate
R
g
C
dg
V
c
R
i
R
ds
C
ds
R
s
L
s
I
DS
Ground
R
d
Drain
C
gs
R
dg
P35-1110
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Chip Outline
Recommended Bonding Configuration
Package Outline
Gate
Grounded stud
through substrate
Drain
Microstrip Lines
P35-1110
Chip size:
.420 x .380mm
Bond pad size: 100x150 m
100x110 m
Chip thickness: 150 m
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467/SM/00147/200 Issue 1/1
Bookham Technology 2003 Bookham is a registered trademark of Bookham Technology plc
Package Details
The leads of the package can be soldered to
microstrip circuitry using solders with melting points
below 170 C. Low melting point solders, such as
50Sn/50In, 80In/15Pb/5Ag and 37.5Sn/37.5Pb/25In
are recommended. Silver loaded epoxies can also
be used and cured at below 150 C for times of up
to 2 hours.
Ablebond 89-1 LMIT silver loaded epoxy resin.
Manufactured by:
Ablestick Laboratories , 833 West 182 nd Street,
Gardena , California 90248, USA
Ordering Information
P35-1110-0 Chip
P35-1110-1 Micro-X Package
P35-1110
MMICS
Bookham Technology plc
Caswell
Towcester
Northamptonshire
NN12 8EQ
UK
Tel: +44 (0) 1327 356 789
Fax: +44 (0) 1327 356 698
rfsales@bookham.com
Important Notice
Bookham Technology has a policy of
continuous improvement. As a result
certain parameters detailed on this flyer
may be subject to change without notice.
If you are interested in a particular product
please request the product specification
sheet, available from any RF sales
representative.
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