1993 Burr-Brown Corporation
PDS-1206C
Printed in U.S.A. June, 1996
BUF634
FEATURES
q
HIGH OUTPUT CURRENT: 250mA
q
SLEW RATE: 2000V/
s
q
PIN-SELECTED BANDWIDTH:
30MHz to 180MHz
q
LOW QUIESCENT CURRENT:
1.5mA (30MHz BW)
q
WIDE SUPPLY RANGE:
2.25 to
18V
q
INTERNAL CURRENT LIMIT
q
THERMAL SHUTDOWN PROTECTION
q
8-PIN DIP, SO-8, 5-LEAD TO-220, 5-LEAD
DDPAK SURFACE-MOUNT
BW
NC
V
IN
V
NC
V+
V
O
NC
1
2
3
4
8
7
6
5
8-Pin DIP Package
SO-8 Surface-Mount Package
G = 1
APPLICATIONS
q
VALVE DRIVER
q
SOLENOID DRIVER
q
OP AMP CURRENT BOOSTER
q
LINE DRIVER
q
HEADPHONE DRIVER
q
VIDEO DRIVER
q
MOTOR DRIVER
q
TEST EQUIPMENT
q
ATE PIN DRIVER
DESCRIPTION
The BUF634 is a high speed unity-gain open-loop
buffer recommended for a wide range of applications.
It can be used inside the feedback loop of op amps to
increase output current, eliminate thermal feedback
and improve capacitive load drive.
For low power applications, the BUF634 operates
on 1.5mA quiescent current with 250mA output,
2000V/
s slew rate and 30MHz bandwidth. Band-
width can be adjusted from 30MHz to 180MHz by
connecting a resistor between V and the BW Pin.
Output circuitry is fully protected by internal current
limit and thermal shut-down making it rugged and
easy to use.
The BUF634 is available in a variety of packages to
suit mechanical and power dissipation requirements.
Types include 8-pin DIP, SO-8 surface-mount, 5-lead
TO-220, and a 5-lead DDPAK surface-mount plastic
power package.
250mA HIGH-SPEED BUFFER
BUF634
BUF634
BUF634
BUF634
G = 1
G = 1
V
V
O
V+
V
IN
BW
1 2 3 4 5
5-Lead
TO-220
V
V
O
V+
V
IN
BW
1 2 3 4 5
NOTE: Tabs are connected
to V supply.
5-Lead DDPAK
Surface Mount
International Airport Industrial Park Mailing Address: PO Box 11400, Tucson, AZ 85734 Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 Tel: (520) 746-1111 Twx: 910-952-1111
Internet: http://www.burr-brown.com/ FAXLine: (800) 548-6133 (US/Canada Only) Cable: BBRCORP Telex: 066-6491 FAX: (520) 889-1510 Immediate Product Info: (800) 548-6132
SBOS030
2
BUF634
SPECIFICATIONS
ELECTRICAL
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN
assumes no responsibility for the use of this information, and all use of such information shall be entirely at the user's own risk. Prices and specifications are subject
to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not
authorize or warrant any BURR-BROWN product for use in life support devices and/or systems.
V+
V
V
O
V
IN
BW
V+
V
V
O
V
IN
T
Specifications the same as Low Quiescent Mode.
NOTES: (1) Tests are performed on high speed automatic test equipment, at approximately 25
C junction temperature. The power dissipation of this product will
cause some parameters to shift when warmed up. See typical performance curves for over-temperature performance. (2) Limited output swing available at low supply
voltage. See Output voltage specifications. (3) Typical when all leads are soldered to a circuit board. See text for recommendations.
At T
A
= +25
C
(1)
, V
S
=
15V, unless otherwise noted.
BUF634P, U, T, F
LOW QUIESCENT CURRENT MODE
WIDE BANDWIDTH MODE
PARAMETER
CONDITION
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
INPUT
Offset Voltage
30
100
T
T
mV
vs Temperature
Specified Temperature Range
100
T
V/
C
vs Power Supply
V
S
=
2.25V
(2)
to
18V
0.1
1
T
T
mV/V
Input Bias Current
V
IN
= 0V
0.5
2
5
20
A
Input Impedance
R
L
= 100
80 || 8
8 || 8
M
|| pF
Noise Voltage
f = 10kHz
4
T
nV/
Hz
GAIN
R
L
= 1k
, V
O
=
10V
0.95
0.99
T
T
V/V
R
L
= 100
, V
O
=
10V
0.85
0.93
T
T
V/V
R
L
= 67
, V
O
=
10V
0.8
0.9
T
T
V/V
OUTPUT
Current Output, Continuous
250
T
mA
Voltage Output, Positive
I
O
= 10mA
(V+) 2.1
(V+) 1.7
T
T
V
Negative
I
O
= 10mA
(V) +2.1
(V) +1.8
T
T
V
Positive
I
O
= 100mA
(V+) 3
(V+) 2.4
T
T
V
Negative
I
O
= 100mA
(V) +4
(V ) +3.5
T
T
V
Positive
I
O
= 150mA
(V+) 4
(V+) 2.8
T
T
V
Negative
I
O
= 150mA
(V) +5
(V) +4
T
T
V
Short-Circuit Current
350
550
400
T
mA
DYNAMIC RESPONSE
Bandwidth, 3dB
R
L
= 1k
30
180
MHz
R
L
= 100
20
160
MHz
Slew Rate
20Vp-p, R
L
= 100
2000
T
V/
s
Settling Time, 0.1%
20V Step, R
L
= 100
200
T
ns
1%
20V Step, R
L
= 100
50
T
ns
Differential Gain
3.58MHz, V
O
= 0.7V, R
L
= 150
4
0.4
%
Differential Phase
3.58MHz, V
O
= 0.7V, R
L
= 150
2.5
0.1
POWER SUPPLY
Specified Operating Voltage
15
T
V
Operating Voltage Range
2.25
(2)
18
T
T
V
Quiescent Current, I
Q
I
O
= 0
1.5
2
15
20
mA
TEMPERATURE RANGE
Specification
40
+85
T
T
C
Operating
40
+125
T
T
C
Storage
55
+125
T
T
C
Thermal Shutdown
Temperature, T
J
175
T
C
Thermal Resistance,
JA
"P" Package
(3)
100
T
C/W
JA
"U" Package
(3)
150
T
C/W
JA
"T" Package
(3)
65
T
C/W
JC
"T" Package
6
T
C/W
JA
"F" Package
(3)
65
T
C/W
JC
"F" Package
6
T
C/W
BUF634
3
PIN CONFIGURATION
Top View
8-Pin Dip Package
SO-8 Surface-Mount Package
Top View
Supply Voltage .....................................................................................
18V
Input Voltage Range ...............................................................................
V
S
Output Short-Circuit (to ground) ................................................. Continuous
Operating Temperature ..................................................... 40
C to +125
C
Storage Temperature ........................................................ 55
C to +125
C
Junction Temperature ....................................................................... +150
C
Lead Temperature (soldering,10s) .................................................... +300
C
NC = No Connection
BW
NC
V
IN
V
NC
V+
V
O
NC
1
2
3
4
8
7
6
5
G = 1
Any integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
ESD damage can range from subtle performance degrada-
tion to complete device failure. Precision integrated circuits
may be more susceptible to damage because very small
parametric changes could cause the device not to meet
published specifications.
ELECTROSTATIC
DISCHARGE SENSITIVITY
NOTE: Tab electrically
connected to V.
G = 1
G = 1
V
V
O
V+
V
IN
BW
1 2 3 4 5
5-Lead
TO-220
V
V
O
V+
V
IN
BW
1 2 3 4 5
5-Lead DDPAK
Surface Mount
PACKAGE
DRAWING
TEMPERATURE
PRODUCT
PACKAGE
NUMBER
(1)
RANGE
BUF634P
8-Pin Plastic DIP
006
40
C to +85
C
BUF634U
SO-8 Surface-Mount
182
40
C to +85
C
BUF634T
5-Lead TO-220
315
40
C to +85
C
BUF634F
5-Lead DDPAK
325
40
C to +85
C
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.
PACKAGE/ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS
4
BUF634
GAIN and PHASE vs FREQUENCY
vs LOAD CAPACITANCE
Frequency (Hz)
1M
10M
100M
1G
Phase ()
0
10
20
30
40
50
C
L
= 0
C
L
= 50pF
C
L
= 200pF
C
L
= 1nF
10
5
0
5
10
15
Gain (dB)
Wide BW Mode
R
L
= 100
R
S
= 50
V
O
= 10mV
GAIN and PHASE vs FREQUENCY
vs LOAD CAPACITANCE
Frequency (Hz)
1M
10M
100M
1G
Phase ()
0
10
20
30
40
50
C
L
= 0pF
C
L
= 50pF
C
L
= 200pF
C
L
= 1nF
10
5
0
5
10
15
Gain (dB)
Low I
Q
Mode
R
L
= 100
R
S
= 50
V
O
= 10mV
GAIN and PHASE vs FREQUENCY
vs LOAD RESISTANCE
Frequency (Hz)
1M
10M
100M
1G
Phase ()
0
10
20
30
40
50
R
L
= 1k
R
L
= 100
R
L
= 50
10
5
0
5
10
15
Gain (dB)
R
S
= 50
V
O
= 10mV
Wide BW
Low I
Q
Low I
Q
Wide BW
GAIN and PHASE vs FREQUENCY
vs SOURCE RESISTANCE
Frequency (Hz)
1M
10M
100M
1G
Phase ()
0
10
20
30
40
50
R
S
= 0
R
S
= 50
R
S
= 100
10
5
0
5
10
15
Gain (dB)
Wide BW
Low I
Q
Low I
Q
Wide BW
R
L
= 100
V
O
= 10mV
GAIN and PHASE vs FREQUENCY
vs TEMPERATURE
Frequency (Hz)
1M
10M
100M
1G
Phase ()
0
10
20
30
40
50
T
J
= 40C
T
J
= 25C
T
J
= 125C
10
5
0
5
10
15
Gain (dB)
Wide BW
Wide BW
Low I
Q
Low I
Q
R
L
= 100
R
S
= 50
V
O
= 10mV
GAIN and PHASE vs FREQUENCY
vs QUIESCENT CURRENT
Frequency (Hz)
1M
10M
100M
1G
Phase ()
0
10
20
30
40
50
I
Q
= 15mA
I
Q
= 9mA
I
Q
= 4mA
I
Q
= 2.5mA
I
Q
= 1.5mA
10
5
0
5
10
15
Gain (dB)
R
L
= 100
R
S
= 50
V
O
= 10mV
TYPICAL PERFORMANCE CURVES
At T
A
= +25
C, V
S
=
15V, unless otherwise noted.
BUF634
5
QUIESCENT CURRENT vs TEMPERATURE
20
15
10
5
0
Junction Temperature (C)
50
25
0
25
50
75
100
125
150
175
200
Thermal Shutdown
10C
Cooling
Wide BW Mode
Quiescent Current (mA)
QUIESCENT CURRENT vs TEMPERATURE
7
6
5
4
3
2
1
0
Quiescent Current (mA)
Junction Temperature (C)
50
25
0
25
50
75
100
125
150
175
200
Cooling
Thermal Shutdown
Low I
Q
Mode
10C
GAIN and PHASE vs FREQUENCY
vs POWER SUPPLY VOLTAGE
Frequency (Hz)
1M
10M
100M
1G
Phase ()
0
10
20
30
40
50
V
S
= 18V
V
S
= 12V
V
S
= 5V
V
S
= 2.25V
10
5
0
5
10
15
Gain (dB)
Wide BW
Low I
Q
Low I
Q
Wide BW
R
L
= 100
R
S
= 50
V
O
= 10mV
TYPICAL PERFORMANCE CURVES
(CONT)
At T
A
= +25
C, V
S
=
15V, unless otherwise noted.
POWER SUPPLY REJECTION vs FREQUENCY
100
90
80
70
60
50
40
30
20
10
0
1k
10k
100k
1M
10M
Frequency (Hz)
Wide BW
Low I
Q
Power Supply Rejection (dB)
SHORT CIRCUIT CURRENT vs TEMPERATURE
500
450
400
350
300
250
200
50
25
0
25
50
75
100
125
150
Junction Temperature (C)
Wide Bandwidth Mode
Low I
Q
Mode
Limit Current (mA)
QUIESCENT CURRENT
vs BANDWIDTH CONTROL RESISTANCE
Resistance (
)
10
100
1k
10k
Quiescent Current (mA)
20
18
16
14
12
10
8
6
4
2
0
15mA at R = 0
1.5mA at R =
R
15V
+15V
BW
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