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Precision, Isolated
INSTRUMENTATION AMPLIFIER
DESCRIPTION
ISO165 and ISO175 are precision isolated instrumen-
tation amplifiers incorporating a novel duty cycle
modulation-demodulation technique and excellent ac-
curacy. A single external resistor sets the gain. Internal
input protection can withstand up to
40V without
damage. The signal is transmitted digitally across a
differential capacitive barrier. With digital modulation
the barrier characteristics do not affect signal integrity.
This results in excellent reliability and good high
frequency transient immunity across the barrier. Both
the amplifier and barrier capacitors are housed in a
plastic DIP. ISO165 and ISO175 differ in frequency
response and linearity.
These amplifiers are easy to use. A power supply
range of
4.5V to
18V makes these amplifiers ideal
for a wide range of applications.
ISO165
ISO175
FEATURES
q
RATED
1500Vrms Continuous
2500Vrms for One Minute
100% TESTED FOR PARTIAL DISCHARGE
q
HIGH IMR: 115dB at 50Hz
q
LOW NONLINEARITY:
0.01%
q
LOW INPUT BIAS CURRENT: 10nA max
q
LOW INPUT OFFSET VOLTAGE: 101mV max
q
INPUTS PROTECTED TO
40V
q
BIPOLAR OPERATION: V
O
=
10V
q
SYNCHRONIZATION CAPABILITY
q
24-PIN PLASTIC DIP: 0.3" Wide
APPLICATIONS
q
INDUSTRIAL PROCESS CONTROL
Transducer Isolator, Thermocouple
Isolator, RTD Isolator, Pressure Bridge
Isolator, Flow Meter Isolator
q
POWER MONITORING
q
MEDICAL INSTRUMENTATION
q
ANALYTICAL MEASUREMENTS
q
BIOMEDICAL MEASUREMENTS
q
DATA ACQUISITION
q
TEST EQUIPMENT
q
POWER MONITORING
q
GROUND LOOP ELIMINATION
ISO165
ISO175
V
IN
Shield 1
Ext Osc
+V
S1
+V
S2
GND1
V
S1
V
S2
GND2
23
20
3
13
12
5
21
4
15
Shield 2
V
OUT
Com2
14
11
10
FBP
FBN
V
IN+
1
22
2
24
Com1
1996 Burr-Brown Corporation
PDS-1293
Printed in U.S.A. May, 1996
2
ISO165/ISO175
1
+
50k
R
G
0.125
+
51
G
0.125
+
101
G
1
+
50k
R
G
SPECIFICATIONS
At T
A
= +25
C, V
S1
= V
S2
=
15V, and R
L
= 2k
unless otherwise noted.
ISO165P
ISO175P
PARAMETER
CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
ISOLATION
(1)
Voltage Rated Continuous:
AC
T
MIN
to T
MAX
1500
1500
Vrms
DC
T
MIN
to T
MAX
2121
2121
VDC
100% Test (AC, 50Hz)
1s; Partial Discharge
5pC
2500
2500
Vrms
Isolation-Mode Rejection
AC 50Hz
1500Vrms
115
115
dB
DC
160
160
dB
Barrier Impedance
10
14
|| 6
10
14
|| 6
|| pF
Leakage Current
VISO = 240Vrms, 50Hz
0.8
1
0.8
1
Arms
GAIN
V/V
Gain Error
G = 1
0.35
0.35
%
G = 10
0.07
0.07
%
G = 100
0.95
0.95
%
Gain vs Temperature
G = 1
11
11
ppm/
C
Nonlinearity
G = 1
0.052
0.102
%
G = 10
0.01
0.04
%
G = 100
0.054
0.104
%
INPUT OFFSET VOLTAGE
Initial Offset
G = 1, 100
mV
vs Temperature
V/
C
vs Supply
G = 1
2
2
mV/V
INPUT
Voltage Range
10
10
V
Bias Current
10
10
nA
vs Temperature
40
40
pA/
C
Offset Current
10
10
nA
vs Temperature
40
40
pA/
C
OUTPUT
Voltage Range
10
10
V
Current Drive
5
5
mA
Capacitive Load Drive
0.1
0.1
F
Ripple Voltage
10
10
mVp-p
FREQUENCY RESPONSE
Small Signal Bandwidth
G = 1
6
60
kHz
G = 10
6
60
kHz
G = 100
6
50
kHz
Slew Rate
V
O
=
10V, G = 10
0.9
0.9
V/
s
POWER SUPPLIES
Rated Voltage
15
15
V
Voltage Range
4.5
18
4.5
18
V
Quiescent Current
V
S1
7.4
7.4
mA
V
S2
7.5
7.5
mA
TEMPERATURE RANGE
Operating
40
85
40
85
C
Storage
40
125
40
125
C
NOTE: (1) All devices receive a 1s test. Failure criterion is
5 pulses of
5pc.
1
+
170
G
1
+
520
G
3
ISO165/ISO175
PIN CONFIGURATION
Any integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
ESD damage can range from subtle performance degrada-
tion to complete device failure. Precision integrated circuits
may be more susceptible to damage because very small
parametric changes could cause the device not to meet
published specifications.
PACKAGE INFORMATION
PACKAGE DRAWING
MODEL
PACKAGE
NUMBER
(1)
ISO165P
24-Pin Plastic DIP
243-2
ISO175P
24-Pin Plastic DIP
243-2
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix D of Burr-Brown IC Data Book.
ELECTROSTATIC
DISCHARGE SENSITIVITY
ABSOLUTE MAXIMUM RATINGS
Supply Voltage ...................................................................................
18V
Analog Input Voltage Range ..............................................................
40V
External Oscillator Input .....................................................................
25V
Com 1 to GND1 ...................................................................................
1V
Com 2 to GND2 ...................................................................................
1V
Continuous Isolation Voltage: .................................................... 1500Vrms
IMV, dv/dt ...................................................................................... 20kV/
s
Junction Temperature ...................................................................... 150
C
Storage Temperature ...................................................... 40
C to +125
C
Lead Temperature (soldering, 10s) ................................................ +300
C
Output Short Duration .......................................... Continuous to Common
ORDERING INFORMATION
MODEL
PACKAGE
BANDWIDTH
ISO165P
24-Pin Plastic DIP
6kHz
ISO175P
24-Pin Plastic DIP
60kHz
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the user's own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.
V
S1
V
S1+
Shield 1
Com 2
V
OUT
GND 2
FBP
EXT OSC
GND 1
V
S2+
Shield 2
V
S2
FBN
Com 1
V
IN
1
2
3
4
5
10
11
12
24
23
22
21
20
15
14
13
V
IN+
4
ISO165/ISO175
100
Frequency (Hz)
10
1k
100
Peak Isolation Voltage
ISOLATION MODE VOLTAGE
vs FREQUENCY
10k
1M
100M
1k
100k
10M
2k
Max AC
Rating
Degraded
Performance
Max DC Rating
Typical
Performance
TYPICAL PERFORMANCE CURVES
At T
A
= +25
C, V
S1
= V
S2
=
15V, and R
L
= 2k
unless otherwise noted.
1
Frequency (Hz)
0
60
40
20
PSRR (dB)
PSRR vs FREQUENCY
100
10k
1M
10
1k
100k
V
S1
, V
S2
+V
S1
, +V
S2
54
1
Frequency (Hz)
40
160
140
120
100
80
60
IMR (dB)
100
10k
1M
10
1k
100k
IMR vs FREQUENCY
0
f
IN
(Hz)
0
20
40
V
OUT
/V
IN
(dB)
SIGNAL RESPONSE vs CARRIER FREQUENCY
f
C
2f
C
3f
C
0
0
0
0
f
c
/2
f
C
/2
f
C
/2
f
OUT
(Hz)
20dB/dec (for comparison only)
0
Time (s)
15
10
5
0
5
10
15
Output Voltage (V)
400
1000
200
600
800
SINE RESPONSE ISO175
(f = 2kHz, Gain = 10)
1
Frequency (Hz)
0.1A
100mA
10mA
1mA
100A
10A
1A
Leakage Current (rms)
ISOLATION LEAKAGE CURRENT
vs FREQUENCY
100
10k
1M
10
1k
100k
240 Vrms
1500 Vrms
5
ISO165/ISO175
0
Time (s)
10
5
0
5
10
15
Output Voltage (V)
15
10
5
0
5
10
Input Voltage (V)
40
100
20
60
80
STEP RESPONSE ISO175
0
Time (s)
10
5
0
5
10
15
Output Voltage (V)
15
10
5
0
5
10
Input Voltage (V)
200
500
100
300
400
STEP RESPONSE ISO175
TYPICAL PERFORMANCE CURVES
(CONT)
At T
A
= +25
C, V
S1
= V
S2
=
15V, and R
L
= 2k
unless otherwise noted.
0
Time (s)
15
10
5
0
5
10
15
Output Voltage (V)
400
1000
200
600
800
SINE RESPONSE ISO175
(f = 20kHz, Gain = 10)
GAIN vs FREQUENCY ISO175
80
60
40
20
0
20
Gain (dB)
Frequency (Hz)
1k
10k
100k
G = 100
G = 10
G = 1
G = 1000
INPUT COMMON-MODE RANGE
vs OUTPUT VOLTAGE
Output Voltage (V)
Common-Mode Voltage (V)
15
10
0
5
15
5
15
10
5
0
5
10
15
10
All
Gains
All
Gains
G = 1
G = 1
G
10
G
10
V
D/2
+
+
V
CM
V
O
V
D/2
INPUT BIAS AND OFFSET CURRENT
vs TEMPERATURE
5
4
3
2
1
0
1
2
3
4
5
75
50
25
0
25
50
75
100
125
Temperature (C)
Input Bias and Offset Current (nA)
I
OS
I
b
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