XTR105
1
RTD
XTR105
4-20 mA
V
PS
V
O
R
L
R
G
V
LIN
V
REG
+
7.5V to 36V
I
R
= 0.8mA
I
R
= 0.8mA
XTR105
4-20mA CURRENT TRANSMITTER
with Sensor Excitation and Linearization
FEATURES
q
LOW UNADJUSTED ERROR
q
TWO PRECISION CURRENT SOURCES
800
A EACH
q
RTD OR BRIDGE EXCITATION
q
LINEARIZATION
q
TWO OR THREE-WIRE RTD OPERATION
q
LOW OFFSET DRIFT: 0.4
V/
C
q
LOW OUTPUT CURRENT NOISE: 30nAp-p
q
HIGH PSR: 110dB min
q
HIGH CMR: 86dB min
q
WIDE SUPPLY RANGE: 7.5V TO 36V
q
14-PIN DIP AND SO-14 SOIC PACKAGES
APPLICATIONS
q
INDUSTRIAL PROCESS CONTROL
q
FACTORY AUTOMATION
q
SCADA REMOTE DATA ACQUISITION
q
REMOTE TEMPERATURE AND PRESSURE
TRANSDUCERS
200C
Pt100 NONLINEARITY CORRECTION
USING XTR105
Process Temperature (C)
+850C
5
4
3
2
1
0
1
Uncorrected
RTD Nonlinearity
Corrected
Nonlinearity
Nonlinearity (%)
DESCRIPTION
The XTR105 is a monolithic 4-20mA, two-wire
current transmitter with two precision current sources.
It provides complete current excitation for Platinum
RTD temperature sensors and bridges, instrumenta-
tion amplifier, and current output circuitry on a single
integrated circuit.
Versatile linearization circuitry provides a 2nd-order
correction to the RTD, typically achieving a 40:1
improvement in linearity.
Instrumentation amplifier gain can be configured for a
wide range of temperature or pressure measurements.
Total unadjusted error of the complete current trans-
mitter is low enough to permit use without adjustment
in many applications. This includes zero output cur-
rent drift, span drift and nonlinearity. The XTR105
operates on loop power supply voltages down to 7.5V.
The XTR105 is available in 14-pin plastic DIP and
SO-14 surface-mount packages and is specified for the
40
C to +85
C industrial temperature range.
XTR105
XTR105
International Airport Industrial Park Mailing Address: PO Box 11400, Tucson, AZ 85734 Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 Tel: (520) 746-1111 Twx: 910-952-1111
Internet: http://www.burr-brown.com/ FAXLine: (800) 548-6133 (US/Canada Only) Cable: BBRCORP Telex: 066-6491 FAX: (520) 889-1510 Immediate Product Info: (800) 548-6132
PDS-1362B
www.burr-brown.com/databook/XTR105.html
1997 Burr-Brown Corporation
PDS-1362B
Printed in U.S.A. February, 1997
2
I
O
= V
IN
(40/R
G
) + 4mA, V
IN
in Volts, R
G
in
T
Specification same as XTR105P, XTR105U.
NOTES: (1) Describes accuracy of the 4mA low-scale offset current. Does not include input amplifier effects. Can be trimmed to zero. (2) Voltage measured with
respect to I
RET
pin. (3) Does not include initial error or TCR of gain-setting resistor, R
G
. (4) Increasing the full-scale input range improves nonlinearity. (5) Does not
include Zero Output initial error. (6) Current source output voltage with respect to I
RET
pin.
SPECIFICATIONS
At T
A
= +25
C, V+
= 24V, and TIP29C external transistor, unless otherwise noted.
XTR105P, U
XTR105PA, UA
PARAMETER
CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
OUTPUT
Output Current Equation
A
Output Current, Specified Range
4
20
T
T
mA
Over-Scale Limit
24
27
30
T
T
T
mA
Under-Scale Limit
I
REG
= 0V
1.8
2.2
2.6
T
T
T
mA
ZERO OUTPUT
(1)
V
IN
= 0V, R
G
=
4
T
mA
Initial Error
5
25
T
50
A
vs Temperature
0.07
0.5
T
0.9
A/
C
vs Supply Voltage, V+
V+ = 7.5V to 36V
0.04
0.2
T
T
A/V
vs Common-Mode Voltage
V
CM
= 1.25V to 3.5V
(2)
0.02
T
A/V
vs V
REG
Output Current
0.3
T
A/mA
Noise: 0.1Hz to 10Hz
0.03
T
Ap-p
SPAN
Span Equation (Transconductance)
S = 40/R
G
T
A/V
Initial Error
(3)
Full Scale (V
IN
) = 50mV
0.05
0.2
T
0.4
%
vs Temperature
(3)
3
25
T
T
ppm/
C
Nonlinearity: Ideal Input
(4)
Full Scale (V
IN
) = 50mV
0.003
0.01
T
T
%
INPUT
(5)
Offset Voltage
V
CM
= 2V
50
100
T
250
V
vs Temperature
0.4
1.5
T
3
V/
C
vs Supply Voltage, V+
V+ = 7.5V to 36V
0.3
3
T
T
V/V
vs Common-Mode Voltage,
V
CM
= 1.25V to 3.5V
(2)
10
50
T
100
V/V
RTI (CMRR)
Common-Mode Input Range
(2)
1.25
3.5
T
T
V
Input Bias Current
5
25
T
50
nA
vs Temperature
20
T
pA/
C
Input Offset Current
0.2
3
T
10
nA
vs Temperature
5
T
pA/
C
Impedance: Differential
0.1 || 1
T
G
|| pF
Common-Mode
5 || 10
T
G
|| pF
Noise: 0.1Hz to 10Hz
0.6
T
Vp-p
CURRENT SOURCES
V
O
= 2V
(6)
Current
800
T
A
Accuracy
0.05
0.2
T
0.4
%
vs Temperature
15
35
T
75
ppm/
C
vs Power Supply, V+
V+ = 7.5V to 36V
10
25
T
T
ppm/V
Matching
0.02
0.1
T
0.2
%
vs Temperature
3
15
T
30
ppm/
C
vs Power Supply, V+
V+ = 7.5V to 36V
1
10
T
T
ppm/V
Compliance Voltage, Positive
(V+) 3
(V+) 2.5
T
T
V
Negative
(2)
0
0.2
T
T
V
Output Impedance
150
T
M
Noise: 0.1Hz to 10Hz
0.003
T
Ap-p
V
REG
(2)
5.1
T
V
Accuracy
0.02
0.1
T
T
V
vs Temperature
0.2
T
mV/
C
vs Supply Voltage, V+
1
T
mV/V
Output Current
1
T
mA
Output Impedance
75
T
LINEARIZATION
R
LIN
(internal)
1
T
k
Accuracy
0.2
0.5
T
1
%
vs Temperature
25
100
T
T
ppm/
C
POWER SUPPLY
Specified
+24
T
V
Voltage Range
+7.5
+36
T
T
V
TEMPERATURE RANGE
Specification, T
MIN
to T
MAX
40
+85
T
T
C
Operating
55
+125
T
T
C
Storage
55
+125
T
T
C
Thermal Resistance,
JA
14-Pin DIP
80
T
C/W
SO-14 Surface-Mount
100
T
C/W
XTR105
3
Power Supply, V+ (referenced to I
O
pin) .......................................... 40V
Input Voltage, V
IN
, V
IN
(referenced to I
O
pin) ............................ 0V to V+
Storage Temperature Range ........................................ 55
C to +125
C
Lead Temperature (soldering, 10s) .............................................. +300
C
Output Current Limit ............................................................... Continuous
Junction Temperature ................................................................... +165
C
NOTE: (1) Stresses above these ratings may cause permanent damage.
ABSOLUTE MAXIMUM RATINGS
(1)
Top View
DIP and SOIC
PIN CONFIGURATION
+
I
R1
V
IN
R
G
R
G
NC
I
RET
I
O
I
R2
V
IN
V
LIN
V
REG
V+
B (Base)
E (Emitter)
NC = No Internal Connection.
1
2
3
4
5
6
7
14
13
12
11
10
9
8
+
PACKAGE
DRAWING
TEMPERATURE
PRODUCT
PACKAGE
NUMBER
(1)
RANGE
XTR105PA
14-Pin Plastic DIP
010
40
C to +85
C
XTR105P
14-Pin Plastic DIP
010
40
C to +85
C
XTR105UA
SO-14 Surface Mount
235
40
C to +85
C
XTR105U
SO-14 Surface Mount
235
40
C to +85
C
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.
PACKAGE/ORDERING INFORMATION
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.
FUNCTIONAL BLOCK DIAGRAM
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes no
responsibility for the use of this information, and all use of such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice.
No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant any BURR-BROWN product
for use in life support devices and/or systems.
975
6
I = 100A +
100A
800A
800A
25
V+
Q
1
9
B
10
11
4
13
2
3
8
E
V
IN
R
G
I
O
= 4mA + V
IN
40
R
G
( )
5.1V
R
G
R
LIN
1k
V
IN
+
V
IN
I
RET
7
V
REG
14
1
12
I
R2
I
R1
V
LIN
4
75
50
25
0
25
50
75
100
Temperature (C)
UNDER-SCALE CURRENT vs TEMPERATURE
125
2.40
2.35
2.30
2.25
2.20
2.15
Under-Scale Current (mA)
V+ = 7.5V to 36V
TYPICAL PERFORMANCE CURVES
At T
A
= +25
C, V+ = 24V, unless otherwise noted.
20mA
STEP RESPONSE
25
s/div
4mA/
div
R
G
= 125
R
G
= 2k
4mA
10
100
1k
10k
100k
Frequency (Hz)
POWER-SUPPLY REJECTION vs FREQUENCY
1M
140
120
100
80
60
40
20
0
Power Supply Rejection (dB)
R
G
= 2k
R
G
= 125
100
1k
10k
100k
Frequency (Hz)
TRANSCONDUCTANCE vs FREQUENCY
1M
50
40
30
20
10
0
Transconductance (20 Log mA/V)
R
G
= 125
R
G
= 500
R
G
= 2k
10
100
1k
10k
100k
Frequency (Hz)
1M
110
100
90
80
70
60
50
40
30
20
Common-Mode Rejection (dB)
COMMON-MODE REJECTION vs FREQUENCY
R
G
= 2k
R
G
= 125
Full-Scale Input = 50mV
75
50
25
0
25
50
75
100
Temperature (C)
OVER-SCALE CURRENT vs TEMPERATURE
125
29
28
27
26
25
24
23
Over-Scale Current (mA)
V+ = 7.5V
V+ = 36V
V+ = 24V
With External Transistor
XTR105
5
TYPICAL PERFORMANCE CURVES
(CONT)
At T
A
= +25
C, V+
= 24V, unless otherwise noted.
75
50
25
0
25
50
75
100
Temperature (C)
INPUT BIAS AND OFFSET CURRENT
vs TEMPERATURE
125
25
20
15
10
5
0
Input Bias and Offset Current (nA)
+I
B
I
OS
I
B
1
10
100
1k
10k
Frequency (Hz)
INPUT VOLTAGE AND CURRENT
NOISE DENSITY vs FREQUENCY
100k
10k
1k
100
10
Input Voltage Noise (nV/
Hz)
10k
1k
100
10
Input Current Noise (fA/
Hz)
Current Noise
Voltage Noise
1
10
100
1k
10k
Frequency (Hz)
ZERO OUTPUT AND REFERENCE
CURRENT NOISE vs FREQUENCY
100k
10k
1k
100
10
Noise (pA/
Hz)
Zero Output Current
Reference Current
75
50
25
0
25
50
75
100
Temperature (C)
ZERO OUTPUT CURRENT ERROR
vs TEMPERATURE
125
4
2
0
2
4
6
8
10
12
Zero Output Current Error (A)
Input Offset Voltage Drift (V/C)
INPUT OFFSET VOLTAGE DRIFT
PRODUCTION DISTRIBUTION
50
45
40
35
30
25
20
15
10
5
0
Percent of Units (%)
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
0.1%
0.02%
Typical Production Distribution
of Packaged Units.
Zero Output Drift (A/C)
ZERO OUTPUT DRIFT
PRODUCTION DISTRIBUTION
40
35
30
25
20
15
10
5
0
Percent of Units (%)
0.025
0.05
0.075
0.1
0.125
0.15
0.175
0.2
0.225
0.25
0.275
0.3
0.325
0.35
0.375
0.4
0.425
0.45
0.475
0.5
Typical Production Distribution
of Packaged Units.
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