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Электронный компонент: XTR110AG

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International Airport Industrial Park Mailing Address: PO Box 11400 Tucson, AZ 85734 Street Address: 6730 S. Tucson Blvd. Tucson, AZ 85706
Tel: (520) 746-1111 Twx: 910-952-1111 Cable: BBRCORP Telex: 066-6491 FAX: (520) 889-1510 Immediate Product Info: (800) 548-6132
FEATURES
q
4mA TO 20mA TRANSMITTER
q
SELECTABLE INPUT/OUTPUT RANGES:
0V to +5V, 0V to +10V Inputs
0mA to 20mA, 5mA to 25mA Outputs
Other Ranges
q
0.005% MAX NONLINEARITY, 14 BIT
q
PRECISION +10V REFERENCE OUTPUT
q
SINGLE SUPPLY OPERATION
q
WIDE SUPPLY RANGE: 13.5V to 40V
APPLICATIONS
q
INDUSTRIAL PROCESS CONTROL
q
PRESSURE/TEMPERATURE
TRANSMITTERS
q
CURRENT-MODE BRIDGE EXCITATION
q
GROUNDED TRANSDUCER CIRCUITS
q
CURRENT SOURCE REFERENCE FOR
DATA ACQUISITION
q
PROGRAMMABLE CURRENT SOURCE
FOR TEST EQUIPMENT
q
POWER PLANT/ENERGY SYSTEM
MONITORING
DESCRIPTION
The XTR110 is a precision voltage-to-current con-
verter designed for analog signal transmission. It ac-
cepts inputs of 0 to 5V or 0 to 10V and can be
connected for outputs of 4 to 20mA, 0 to 20mA, 5 to
25mA and many other commonly used ranges.
A precision on-chip metal film resistor network pro-
vides input scaling and current offsetting. An internal
10V voltage reference can be used to drive external
circuitry.
The XTR110 is available in 16-pin plastic DIP, ce-
ramic DIP and SOL-16 surface-mount packages. Com-
mercial and industrial temperature range models are
available.
R
5
A
1
A
2
16
1
13
14
7
6
8
10
9
15
12
11
4
3
5
2
R
7
R
6
R
9
R
4
R
3
R
2
R
1
R
8
+10V
Reference
V
REF
Force
V
REF
Sense
V
REF
Adjust
V
IN1
(10V)
V
REF
In
V
IN2
(5V)
Common
+V
CC
Offset
(zero)
Adjust
16mA
Span
4mA
Span
Span
Adjust
Source
Sense
Source
Resistor
Gate
Drive
PRECISION VOLTAGE-TO-CURRENT
CONVERTER/TRANSMITTER
XTR110
1984 Burr-Brown Corporation
PDS-555D
Printed in U.S.A. September, 1993
2
XTR110
XTR110AG, KP, KU
XTR110BG
PARAMETER
CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
TRANSMITTER
Transfer Function
Input Range: V
IN1
(5)
Specified Performance
0
+10
*
*
V
V
IN2
Specified Performance
0
+5
*
*
V
Current, I
O
Specified Performance
(1)
4
20
*
*
mA
Derated Performance
(1)
0
40
*
*
mA
Nonlinearity
16mA/20mA Span
(2)
0.01
0.025
0.002
0.005
% of Span
Offset Current, I
OS
I
O
= 4mA
(1)
Initial
(1)
0.2
0.4
0.02
0.1
% of Span
vs Temperature
(1)
0.0003
0.005
*
0.003
% of Span/
C
vs Supply, V
CC
(1)
0.0005
0.005
*
*
% of Span/V
Span Error
I
O
= 20mA
Initial
(1)
0.3
0.6
0.05
0.2
% of Span
vs Temperature
(1)
0.0025
0.005
0.0009
0.003
% of Span/
C
vs Supply, V
CC
(1)
0.003
0.005
*
*
% of Span/V
Output Resistance
From Drain of FET (Q
EXT
)
(3)
10
x
10
9
*
Input Resistance
V
IN1
27
*
k
V
IN2
22
*
k
V
REF
In
19
*
k
Dynamic Response
Settling Time
To 0.1% of Span
15
*
s
To 0.01% of Span
20
*
s
Slew Rate
1.3
*
mA/
s
VOLTAGE REFERENCE
Output Voltage
+9.95
+10
+10.05
+9.98
*
+10.02
V
vs Temperature
35
50
15
30
ppm/
C
vs Supply, V
CC
Line Regulation
0.0002
0.005
*
*
%/V
vs Output Current
Load Regulation
0.0005
0.01
*
*
%/mA
vs Time
100
*
ppm/1k hrs
Trim Range
0.100
+0.25
*
*
V
Output Current
Specified Performance
10
*
mA
POWER SUPPLY
Input Voltage, V
CC
+13.5
+40
*
*
V
Quiescent Current
Excluding I
O
3
4.5
*
*
mA
TEMPERATURE RANGE
Specification: AG, BG
40
+85
*
*
C
KP, KU
0
+70
C
Operating: AG, BG
55
+125
*
*
C
KP, KU
25
+85
C
SPECIFICATIONS
ELECTRICAL
At T
A
= +25
C and V
CC
= +24V and R
L
= 250
**, unless otherwise specified.
I
O
= 10 [(V
REF
In/16) + (V
IN1
/4) + (V
IN2
/2)] /R
SPAN
* Specifications same as AG/KP grades. ** Specifications apply to the range of R
L
shown in Typical Performance Curves.
NOTES: (1) Including internal reference. (2) Span is the change in output current resulting from a full-scale change in input voltage. (3) Within compliance range limited
by (+V
CC
2V) +V
DS
required for linear operation of the FET. (4) For V
REF
adjustment circuit see Figure 3. (5) For extended I
REF
drive circuit see Figure 4. (5) Unit may
be damaged. See section, "Input Voltage Range".
Any integral circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
ESD damage can range from subtle performance degrada-
tion to complete device failure. Precision integrated circuits
may be more susceptible to damage because very small
parametric changes could cause the device not to meet
published specifications.
ELECTROSTATIC
DISCHARGE SENSITIVITY
ABSOLUTE MAXIMUM RATINGS
Power Supply, +V
CC
............................................................................ 40V
Input Voltage, V
IN1
, V
IN2
, V
REF IN
....................................................... +V
CC
See text regarding safe negative input voltage range.
Storage Temperature Range: A, B ................................ 55
C to +125
C
K, U ................................. 40
C to +85
C
Lead Temperature
(soldering, 10s) G, P ................................................................... 300
C
(wave soldering, 3s) U ................................................................ 260
C
Output Short-Circuit Duration, Gate Drive
and V
REF
Force ................................ Continuous to common and +V
CC
Output Current Using Internal 50
Resistor .................................... 40mA
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes no responsibility for the use
of this information, and all use of such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the
circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant any BURR-BROWN product for use in life support devices and/or systems.
3
XYR110
PIN CONFIGURATION
TYPICAL PERFORMANCE CURVES
T
A
= +25
C, V
CC
= 24VDC, R
L
= 250
, unless otherwise noted.
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Source Resistor
Common
V
REF
In
V
IN1
(10V)
V
IN2
(5V)
Zero Adjust
Zero Adjust
Span Adjust
+V
CC
V
REF
Force
Gate Drive
Source Sense
V
REF
Sense
V
REF
Adjust
4mA Span
16mA Span
Top View
ORDERING INFORMATION
MODEL
PACKAGE
TEMPERATURE RANGE
XTR110AG
16-Pin Ceramic DIP
40
C to +85
C
XTR110BG
16-Pin Ceramic DIP
40
C to +85
C
XTR110KP
16-Pin Plastic DIP
0
C to +70
C
XTR110KU
SOL-16 Surface-Mount
0
C to +70
C
PACKAGE INFORMATION
PACKAGE DRAWING
MODEL
PACKAGE
NUMBER
(1)
XTR110AG
16-Pin Ceramic DIP
109
XTR110BG
16-Pin Ceramic DIP
109
XTR110KP
16-Pin Plastic DIP
180
XTR110KU
SOL-16 Surface-Mount
211
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix D of Burr-Brown IC Data Book.
0.001
V
REF
LINE REGULATION vs FREQUENCY
V
REF
/
V
CC
(%/V)
10
1
0.1
0.01
1
10
100
1k
10k
100k
Ripple Frequency (Hz)
0.001
I
O
POWER SUPPLY REGULATION vs FREQUENCY
I
O
/
V
CC
(% of span/V)
10
1
0.1
0.01
1
10
100
1k
10k
100k
Ripple Frequency (Hz)
0
V
REF
Output Current (mA)
(I
OUT
has minimal effect on T
J
)
JUNCTION TEMPERATURE RISE
vs V
REF
OUTPUT CURRENT
Junction Temperature Rise
Above Ambient (C)
100
80
60
40
20
2
8
0
10
4
6
V
CC
= +40V
V
CC
= +15V
V
CC
= +24V
Max. T
J
= +175C
Max. Temp. Rise
for +85C Ambient
JA
= 70C/W
Temperature (C)
TOTAL OUTPUT ERROR vs TEMPERATURE
40
20
0
20
40
60
80
Error (% of span)
2
2
1
0
1
BG
AG
AG
4
XTR110
TYPICAL PERFORMANCE CURVES
(CONT)
T
A
= +25
C, V
CC
= 24VDC, R
L
= 250
, unless otherwise noted.
0
Temperature (C)
I
CC
vs TEMPERATURE
40
5
4
3
2
1
20
0
20
40
60
80
I
CC
(mA) (excluding I
O
)
I
O
= 20mA
I
O
= 4mA
0
+V
CC
(V)
MAXIMUM R
L
vs V
CC
R
L
(
)
2500
2000
1500
1000
500
20
35
15
40
25
30
I
O MAX
= 20mA
I
O MAX
= 40mA
SETTLING TIME WITH POS V
IN
STEP
V
IN
0V
0V
I
O
Error
(0.01% of
Span/Box)
SETTLING TIME WITH NEG V
IN
STEP
V
IN
0V
0V
I
O
Error
(0.01% of
Span/Box)
PULSE RESPONSE
V
IN
0V
I
O
into
500
0V
5
XYR110
APPLICATIONS INFORMATION
Figure 1 shows the basic connections required for 0 to 10V
input and 4 to 20mA output. Other input voltage and output
current ranges require changes in connections of pins 3, 4, 5,
9 and 10 as shown in the table of Figure 1.
The complete transfer function of the XTR110 is:
I
O
=
(1)
R
SPAN
is the internal 50
resistor, R
9
, when connected as
shown in Figure 1. An external R
SPAN
can be connected for
different output current ranges as described later.
EXTERNAL TRANSISTOR
An external pass transistor, Q
EXT
, is required as shown in
Figure 1. This transistor conducts the output signal current.
A P-channel MOSFET transistor is recommended. It must
have a voltage rating equal or greater than the maximum
power supply voltage. Various recommended types are shown
in Table I.
(V
REF IN
)
16
(V
IN1
)
4
10 + +
(V
IN2
)
2
R
SPAN
FIGURE 1. Basic Circuit Connection.
INPUT
OUTPUT
RANGE (V) RANGE (mA)
PIN 3
PIN 4
PIN 5
PIN 9
PIN 10
0-10
0-20
Com
Input
Com
Com
Com
2-10
4-20
Com
Input
Com
Com
Com
0-10
4-20
+10V Ref
Input
Com
Com
Open
0-10
5-25
+10V Ref
Input
Com
Com
Com
0-5
0-20
Com
Com
Input
Com
Com
1-5
4-20
Com
Com
Input
Com
Com
0-5
4-20
+10V Ref
Com
Input
Com
Open
0-5
5-25
+10V Ref
Com
Input
Com
Com
MANUFACTURER
PART NO.
BV
DSS
(1)
BV
GS
(1)
PACKAGE
Ferranti
ZVP1304A
40V
20V
TO-92
ZVP1304B
40V
20V
TO-39
ZVP1306A
60V
20V
TO-92
ZVP1306B
60V
20V
TO-39
International
Rectifier
IRF9513
60V
20V
TO-220
Motorola
MTP8P08
80V
20V
TO-220
RCA
RFL1P08
80V
20V
TO-39
RFT2P08
80V
20V
TO-220
Siliconix
VP0300B
30V
40V
TO-39
(preferred)
VP0300L
30V
40V
TO-92
VP0300M
30V
40V
TO-237
VP0808B
80V
40V
TO-39
VP0808L
80V
40V
TO-92
VP0808M
80V
40V
TO-237
Supertex
VP1304N2
40V
20V
TO-220
VP1304N3
40V
20V
TO-92
VP1306N2
60V
20V
TO-220
VP1306N3
60V
20V
TO-92
NOTE: (1) BV
DSS
--Drain-source breakdown voltage. BV
GS
--Gate-source
breakdown voltage.
TABLE I. Available P-Channel MOSFETs.
R
5
16.25k
16
1
13
14
7
6
8
10
9
15
12
11
4
3
5
2
R
7
6250
R
6
1562.5
R
9
50
R
4
10k
R
3
20k
R
2
R
1
R
8
500
+10V
Reference
Zero
Adjust
1F
+
+V
CC
13.5 to 40V
Span Adjust
4mA Span
R
L
(250
typ)
I
O
4 to 20mA
Q
EXT
P-Channel
MOSFET
(see text)
I
O
I
O
/10
I
O
/10
V
REF
Adj.
Force
Sense
V
IN
0 to 10V
Short
Connection
(see text)
+V
CC
16mA Span
5k
15k