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Электронный компонент: CM3205-00TP

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2006 California Micro Devices Corp. All rights reserved.
05/08/06
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
l
Tel: 408.263.3214
l
Fax: 408.263.7846
l
www.cmd.com
1
CM3205
PRELIMINARY
Features
5A continuous current from V
DDQ
1.8V to 2.6V adjustable V
DDQ
output voltage
600
-
mV typical
V
DDQ
dropout voltage at 5A
V
TT
tracking at 50% of V
DDQ
Source and sink up to 2A V
TT
current
Excellent load and line regulation, low noise
Fast transient response
Meets JEDEC DDR-I SDRAM power spec.
Linear regulator design requires no inductors and
has low external component count
Integrated power MOSFETs
Dual purpose ADJ/Shutdown pin
Built-in over-current limit with short-circuit foldback
and thermal shutdown for V
DDQ
and V
TT
5mA quiescent current
TO252 andTO263 packages for high performance
thermal dissipation and easy PC board layout
Optional RoHS Compliant Lead-free packaging
Applications
DDR memory and active termination buses
Desktop Computers, Servers
Residential and Enterprise Gateways
DSL Modems
Routers and Switchers
DVD recorders
3D AGP cards
LCD TV and STB
Product Description
The CM3205 is a dual-output, low noise linear regula-
tor designed to meet SSTL-2 and SSTL-3 specifica-
tions for DDR-SDRAM V
DDQ
supply and termination
voltage V
TT
supply. With integrated power MOSFET's,
the CM3205 can source up to 5A of V
DDQ
current, and
source or sink up to 2A V
TT
current. The typical drop-
out voltage for V
DDQ
is 600
-
mV at 5A load current.
The CM3205 provides fast response to transient load
changes. Load regulation is excellent, less than 1%,
from no load to full load. It also has built-in over-current
limits and thermal shutdown at 170
C
.
The CM3205 is packaged in an easy-to-use 5-pin
D
2
PAK (TO263-5) and DPAK (TO252-5). Low thermal
resistance (48
C
/W) allows it to withstand 1.7W
(1)
dis-
sipation at 85
C
ambient. It can operate over the indus-
trial ambient temperature range of 40
C
to 85
C
.
1
5
4
3
2
2.50V, 5A
DL0
VDDQ
C hip
S et
DLn
DDR
Memory
REF
845
887
VDDQ
RT0
RTn
680u
680u
680u
3.3V
1.25V, 2.5A
S/D
1u
1k
4.7u
4.7u
4.7u
AD
JSD
GN
D
VD
D
Q
VT
T
VI
N
CM3205
V
REF
Typical Application
DDR V
DDQ
and Termination Voltage Regulator
2006 California Micro Devices Corp. All rights reserved.
2
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
l
Tel: 408.263.3214
l
Fax: 408.263.7846
l
www.cmd.com
05/08/06
CM3205
PRELIMINARY
Ordering Information
Note 1: Parts are shipped in Tape & Reel form unless otherwise specified.
Specifications
PACKAGE / PINOUT DIAGRAM
Note: This drawing is not to scale.
5-Lead TO-252-5 Package
1
2
3
4
5
Top View
ADJSD
V
DDQ
GND
V
IN
V
TT
CM3205-00TP
5-Lead TO-263-5 Package
1
2
3
4
5
Top View
ADJSD
V
DDQ
GND
V
IN
V
TT
CM3205-00TN
PART NUMBERING INFORMATION
Pins
Package
Lead-free Finish
Ordering Part Number
1
Part Marking
5
TO-263-5
CM3205-00TN
5
TO-252-5
CM3205-00TP
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RATING
UNITS
V
IN
to GND
[GND - 0.3] to +6.0
V
Pin Voltages
V
DDQ
,V
TT
to GND
ADJSD to GND
[GND - 0.3] to +6.0
[GND - 0.3] to +6.0
V
V
Storage Temperature Range
-65 to +150
C
Operating Temperature Range
-40 to +85
C
Lead Temperature (Soldering, 10s)
300
C
Package Pinout
2006 California Micro Devices Corp. All rights reserved.
05/08/06
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
l
Tel: 408.263.3214
l
Fax: 408.263.7846
l
www.cmd.com
3
CM3205
PRELIMINARY
ELECTRICAL OPERATING CHARACTERISTICS
(SEE NOTE 1)
V
IN
= 3.3V, typical values are at T
A
= 25C (unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
S
VIN
V
IN
Supply Voltage Range
3.15
3.30
3.50
V
V
UVLO
Under-voltage Lockout
All outputs are no load
2.4
2.7
2.9
V
UVLO Hysterisis
100
mV
I
Q
Quiescent Current
V
DDQ
= 0V, V
TT
= 0V,
ADJSD = 3.3V (shutdown)
3
mA
V
DDQ
= 2.5V, V
TT
= 1.25V, (no load)
5
mA
V
DDQ
Regulator
Output Current Limit
V
OUT
= 2.5V
6.0
8.0
A
V
REF
Reference Voltage
1.203
1.215
1.227
V
I
BIAS
Input Bias Current (I
ADJ
)
VADJSD = V
REF
30
200
nA
V
R LOAD
Load Regulation
I
O
= 10 mA to 5A
1
%
V
R LINE
Line Regulation
V
IN
= 3.15V to 3.5V, I
O
= 10 mA
0.5
%
V
DROPOUT
Dropout Voltage
V
IN
= 3.15V, I
O
= 5A
600
mV
V
TT
Regulator
Output Current Limit (Source)
V
OUT
= 1.25V
2
2.5
A
Output Current Limit (Sink)
V
OUT
= 1.25V
2
2.5
A
V
R VTTLOAD
Load Regulation
I
O
= 0A to 2A
1
%
I
O
= 0A to -2A
1
%
Over Temperature Protection
Thermal Shutdown Temperature
170
C
Thermal Shutdown Hysteresis
50
C
Specifications (cont'd)
2006 California Micro Devices Corp. All rights reserved.
4
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
l
Tel: 408.263.3214
l
Fax: 408.263.7846
l
www.cmd.com
05/08/06
CM3205
PRELIMINARY
VDDQ vs. Temperature
2.49
2.495
2.5
2.505
2.51
-40 -20
0
20
40
60
80 100 120 140
Temperature
o
C
VDDQ
(
V
)
VDDQ vs. Load Current
0
0.5
1
1.5
2
2.5
3
0
2
4
6
8
10
IDDQ (A)
VD
D
Q
(V
)
Ta=25oC
Vin=3.3V
VDDQ Dropout vs. IDDQ
0
100
200
300
400
500
600
0
1
2
3
4
5
IDDQ (A)
Dr
op
ou
t
V
o
l
ta
ge
(
m
V
)
VTT vs. Load Current
0.0
0.5
1.0
1.5
2.0
2.5
-4
-2
0
2
4
ITT (A)
VT
T
(
V)
Source
VTT vs. VDDQ
0.75
0.85
0.95
1.05
1.15
1.25
1.35
1.45
1.55
1.65
1.5
1.75
2
2.25
2.5
2.75
3
3.25
VDDQ (V)
VT
T
(
V
)
Sink
Vin
VDDQ
VTT
1ms/div
1V/div
UVLO
Startup into Full Load
VDDQ=2.5V
Ta = 25
o
C
Typical Operating Curves
2006 California Micro Devices Corp. All rights reserved.
05/08/06
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
l
Tel: 408.263.3214
l
Fax: 408.263.7846
l
www.cmd.com
5
CM3205
PRELIMINARY
Pin Descriptions
VDDQ Transient Response
VTT Transient Response
V
IN
= 3.3V
I
OUT
Step: 10mA ~ 3A
V
TT
V
DDQ
I
OUT
I
OUT
V
IN
= 3.3V
I
OUT
Step: -2.5A ~ +2.5A
PIN DESCRIPTIONS
PIN(S)
NAME
DESCRIPTION
1
ADJSD
This pin is for V
DDQ
output voltage adjustment. The V
DDQ
output voltage is set using an
external resistor divider connected to ADJSD. The output voltage is determined by the
following formula:
where R1 is the ground-side resistor and R2 is the upper resistor of the divider.
Connect these resistors to the V
DDQ
output at the point of regulation.
In addition, this input functions as a shutdown pin. Apply a voltage higher than V
IN
-1.2V
to this pin to simultaneously shutdown both V
DDQ
and V
TT
outputs. The outputs are
restored when the voltage on this pin falls below V
IN
-1.2V. A low-leakage diode in
series with the shutdown input signal is recommended to avoid interference with the
voltage adjustment setting.
2
V
DDQ
V
DDQ
regulator output voltage pin.
3
GND
GROUND reference pin. The back tab is also ground and serves as the package
heatsink. It should be soldered to the circuit board copper to remove excess heat from
the IC.
4
V
IN
Input voltage pin, typically 3.3V from the power supply.
5
V
TT
V
TT
regulator output voltage pin, which is preset to 50% of V
DDQ
.
V
DDQ
1.215V
R1 R2
+
R1
---------------------
=
Typical Operating Characteristics
2006 California Micro Devices Corp. All rights reserved.
6
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
l
Tel: 408.263.3214
l
Fax: 408.263.7846
l
www.cmd.com
05/08/06
CM3205
PRELIMINARY
Application Information
Powering DDR Memory
Double-Data-Rate (DDR) memory has provided a huge
step in performance for personal computers, servers
and graphic systems. As is apparent in its name, DDR
operates at double the data rate of earlier RAM, with
two memory accesses per cycle versus one. DDR
SDRAM's transmit data at both the rising falling edges
of the memory bus clock.
DDR's use of Stub Series Terminated Logic (SSTL)
topology improves noise immunity and power-supply
rejection, while reducing power dissipation. To achieve
this performance improvement, DDR requires more
complex power management architecture than previ-
ous RAM technology.
Unlike the conventional DRAM technology, DDR
SDRAM uses differential inputs and a reference volt-
age for all interface signals. This increases the data
bus bandwidth, and lowers the system power con-
sumption. Power consumption is reduced by lower
operating voltage, a lower signal voltage swing associ-
ated with Stub Series Terminated Logic (SSTL_2) and
by the use of a termination voltage, V
TT
. SSTL_2 is an
industry standard, defined in JEDEC document
JESD8-9. SSTL_2 maintains high-speed data bus sig-
nal integrity by reducing transmission reflections.
JEDEC further defines the DDR SDRAM specification
in JESD79C.
DDR memory requires three tightly regulated voltages:
V
DDQ
, V
TT
, and V
REF
(see
Figure 1
). In a typical
SSTL_2 receiver, the higher current V
DDQ
supply volt-
age is normally 2.5V with a tolerance of 200
-
mV. The
active bus termination voltage, V
TT
, is half of V
DDQ
.
V
REF
is a reference voltage that tracks half of V
DDQ
,
1%, and is compared with the V
TT
terminated signal at
the receiver. V
TT
must be within 40
-
mV of V
REF
.
Figure 1. Typical DDR terminations, Class II
3.3V
1.22V
2.50V, 5A
S hut
Down
CM3205
VDDQ/2, 2.5A
Transmitter
VDDQ
VTT (=VDDQ/2) VDDQ
Receiver
Rs = 25
Line
Rt = 25
VREF (=VDDQ/2)
Functional Block Diagram
2006 California Micro Devices Corp. All rights reserved.
05/08/06
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
l
Tel: 408.263.3214
l
Fax: 408.263.7846
l
www.cmd.com
7
CM3205
PRELIMINARY
The V
TT
power requirement is proportional to the num-
ber of data lines and the resistance of the termination
resistor, but does not vary with memory size.
In a typi-
cal DDR data bus system each data line termination
may momentarily consume 16.2
-
mA to achieve the
405
-
mV minimum over V
TT
needed at the receiver:
A typical 128 Mbyte SSTL-2 memory system, with 192
terminated lines, has a worst-case maximum V
TT
sup-
ply current up to
3.11A. However, a DDR memory
system is dynamic, and the theoretical peak currents
only occur for short durations, if they ever occur at all.
These high current peaks can be handled by the V
TT
external capacitor. In a real memory system, the con-
tinuous average V
TT
current level in normal operation
is less than
200 mA.
The V
DDQ
power supply, in addition to supplying cur-
rent to the memory banks, could also supply current to
controllers and other circuitry. The current level typi-
cally stays within a range of 2.0A to 3.0A, with peaks
up to 4.0A or more, depending on memory size and the
computing operations being performed.
The tight tracking requirements and the need for V
TT
to
sink, as well as source, current provide unique chal-
lenges for powering DDR SDRAM.
CM3205 Regulator
The CM3205 dual output linear regulator provides all of
the power requirements of DDR memory by combining
two linear regulators into a single TO-263 or TO-252 5-
lead package. The V
DDQ
regulator can supply up to 5A
continuous current, and the two-quadrant V
TT
termina-
tion regulator has current sink and source capability to
2A. The V
DDQ
linear regulator uses a PMOS pass
element for a very low dropout voltage, typically 600mV
at a 5A output. The output voltage of the V
DDQ
regula-
tor can be set by an external voltage divider. The sec-
ond output, V
TT
, is regulated at V
DDQ
/2 by an internal
resistor divider. The V
TT
regulator can source, as well
as sink, up to 2A continuous current. The CM3205 is
designed for optimal operation from a nominal 3.3VDC
bus, but can work with V
IN
as high as 5V. When operat-
ing at higher V
IN
voltages, attention must be given to
the increased package power dissipation and propor-
tionally increased heat generation.
V
REF
is typically routed to inputs with high impedance,
such as a comparator, with little current draw. An ade-
quate V
REF
can be created with a simple voltage
divider of precision, matched resistors from V
DDQ
to
ground. A small ceramic bypass capacitor can also be
added for improved noise performance.
Input and Output Capacitors
The CM3205 requires that at least a 680
F electrolytic
capacitor be located near the V
IN
pin for stability and to
maintain the input bus voltage during load transients.
An additional 4.7
F ceramic capacitor between the V
IN
(pin 4) and the GND (pin 5), located as close as possi-
ble to those pins, is recommended to ensure stability.
A minimum of a 680
F electrolytic capacitor is recom-
mended for the V
DDQ
output. An additional 4.7
F
ceramic capacitor between the V
DDQ
(pin 2) and GND,
located very close to those pins, is recommended.
A minimum of a 680
F, electrolytic capacitor is recom-
mended for the V
TT
output. This capacitor should have
low ESR to achieve best output transient response. SP
or OSCON capacitors provide low ESR at high fre-
quency, and thus are a good choice. In addition, place
a 4.7
F ceramic capacitor between the V
TT
pin (pin 5)
and GND, located very close to those pins. The total
ESR must be low enough to keep the transient within
the V
TT
window of 40
-
mV during the transition for
source to sink. An average current step of
0.5A
requires:
Both outputs will remain stable and in regulation even
during light or no load conditions.
Adjusting V
DDQ
Output Voltage
The CM3205 internal bandgap reference is set at
1.215V. The V
DDQ
voltage is adjustable by using a
resistor divider, R1 and R2:
I
terminaton
405mV
Rt 25
(
)
----------------------
16.2mA
=
=
ESR
40mV
1A
---------------
<
40m
=
V
OUT
V
ADJ
1 R2
R1
-------
+
=
Application Information (cont'd)
2006 California Micro Devices Corp. All rights reserved.
8
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
l
Tel: 408.263.3214
l
Fax: 408.263.7846
l
www.cmd.com
05/08/06
CM3205
PRELIMINARY
where V
ADJ
= 1.215V (
-
1%). For best regulator stabil-
ity, we recommend that R1 and R2 not exceed 10
-
k
each.
Shutdown
Pin 1 (ADJSD) also serves as a shutdown pin. When
pin 1 is pulled high, > (V
IN
- 1.2V), the V
DDQ
output is
turned off and both source and sink MOSFET's of the
V
TT
regulator are set to a high impedance state. During
shutdown, the quiescent current is reduced to less than
3mA, independent of output load.
It is recommended that a 1N914 or equivalent low leak-
age diode be placed between Pin 1 and an external
shutdown signal to prevent interference with the ADJ
pin's normal operation. When the diode anode is pulled
low, or left open, the CM3205 is again enabled
.
Current Limit, Foldback and Over-temperature Pro-
tection
The CM3205 features internal current limiting with ther-
mal protection. During normal operation, V
DDQ
limits
the output current to approximately 8A and V
TT
limits
the output current to approximately 2A. When V
TT
is
current limiting into a hard short circuit, the output cur-
rent folds back to a lower level, about 1.5A, until the
over-current condition ends. While current limiting is
designed to prevent gross device failure, care should
be taken not to exceed the power dissipation ratings of
the package. If the junction temperature of the device
exceeds 170
-
C (typical), the thermal protection cir-
cuitry triggers and shuts down both outputs. Once the
junction temperature has cooled to below about
120
-
C, the CM3205 returns to normal operation.
Thermal Considerations
Both the TO-252 and the TO-263 packages provide a
very effective thermal conduction path from the silicon
junction into the PC board to which it is mounted. See
Figure 2
below. These surface mount packages have a
large metal tab that solders to the PC board, where the
ground plane can serve as heatsink. This metal tab
connects internally to GND (pin 3). A top-layer ground
plane is the best in terms of convection air-cooling, a
bottom-layer ground plane is less effective, and a mid-
dle layer ground plane of a multiple-layer PC board is
the least effective.
We recommend the metal tab of CM3205 be soldered
to a minimum of 3 square inches of ground plane on
the top side of the PC board. Use 20 or more plate-
through vias to connect the top layer ground plane to
ground planes on other layers.
When measured in accordance to JEDEC JESD51-3,
under natural convection without forced airflow, the
Theta junction-to-air (
ja) resistance is approximately
48
-
C/watt for the CM3205-00TN (TO-263-5), and
55
-
C/watt for the CM3205-00TP (TO-252-5).
Figure 2. Thermal Layout
Ground
Plane
Vias (0.3mm
Diameter)
(TOP VIEW)
(SIDE VIEW)
Bottom
Ground
Plane
Via
Top
Ground
Plane
Power Trace
Via (0.3mm
Diameter)
Application Information (cont'd)
2006 California Micro Devices Corp. All rights reserved.
05/08/06
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
l
Tel: 408.263.3214
l
Fax: 408.263.7846
l
www.cmd.com
9
CM3205
PRELIMINARY
TO-263-5 Mechanical Specifications
Dimensions for CM3205-00TN devices packaged in 5-
lead, standard TO-263 packages are presented below.
* This is an approximate amount which may vary.
Package Dimensions for Standard TO-263
PACKAGE DIMENSIONS
Package
TO-263
Pins
5
Dimensions
Millimeters
Inches
Min
Max
Min
Max
A
4.34
4.60
0.171
0.181
b
0.74
0.89
0.029
0.035
c
0.33
0.43
0.013
0.017
D
8.92
9.17
0.351
0.361
E
10.16
10.67
0.400
0.420
e
1.70 REF
0.067 REF
L
14.61
15.88
0.575
0.625
L1
2.29
2.79
0.090
0.110
L2
1.14
1.40
0.045 0.055
M
0.23
0.30
0.009
0.012
P
1.14
1.40
0.045
0.055
S
1.40
1.91
0.055
0.075
# per tape
and reel
750 pieces
Controlling dimension: inches
Mechanical Package Diagrams
TOP VIEW
5
4
e
D
L
b
A
SIDE VIEW
E
P
LEADFORM
1
2
3
18-22
L2
S
c
7
7
3
L1
M
SEATING PLANE
0
-8
Pin 1
Marking
Mechanical Details
2006 California Micro Devices Corp. All rights reserved.
05/08/06
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
l
Tel: 408.263.3214
l
Fax: 408.263.7846
l
www.cmd.com
10
CM3205
PRELIMINARY
TO-252-5 Mechanical Specifications
Dimensions for CM3205-00TP devices packaged in 5-
pin TO-252 packages are presented below.
Package Dimensions for TO252-5
PACKAGE DIMENSIONS
Package
TO-252
Pins
5
Dimensions
Millimeters
Inches
Min
Max
Min
Max
A
6.40
6.80
0.252
0.268
B
5.20
5.50
0.205
0.217
C
6.80
7.20
0.268
0.283
D
2.20
2.80
0.087
0.110
G
0.40
0.60
0.016
0.024
H
2.20
2.40
0.087
0.094
J
0.45
0.55
0.018
0.022
K
0
0.15
0
0.006
L
0.90
1.50
0.035
0.059
M
5.40
5.80
0.213
0.228
P
1.27 REF
0.05 REF
S
0.50
0.80
0.020
0.031
# per tape
and reel
750 pieces
Controlling dimension: inches
Mechanical Package Diagrams
FRONT VIEW
5
4
P
M
C
G
H
SIDE VIEW
A
J
LEADFORM
1
2
3
L2
c
0
-15
L
K
SEATING PLANE
0
-10
Pin 1
Marking
BACK VIEW
D1
B
E1
D
S
Mechanical Details (cont'd)