22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
DESIGN DATA
METALLIZATION:
Top: (Anode) ....................Al
Back: (Cathode)..............Au
AL THICKNESS ............25,000 Min
GOLD THICKNESS ........4,000 Min
CHIP THICKNESS ..................10 Mils
TOLERANCES: ALL
Dimensions 2 mils
GENERAL PURPOSE SILICON DIODES
ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE
COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES
EXCEPT SOLDER REFLOW
CD483B
CD485B
CD486B
CD645
AND
CD5194 thru CD5196
MAXIMUM RATINGS
Operating Temperature: -65C to +175C
Storage Temperature: -65C to +175C
NOTE 1
AT 100mA (pulsed) except for CD645
which is at 400mA (pulsed)
ELECTRICAL CHARACTERISTICS @ 25C, unless otherwise specified
VRM
VRWM
I O
I O
IFSM
TYPE
TA=+150
C
tp = 1/120 S
TA=25
C
V(pk)
V(pk)
mA
mA
A
CD483B
80
70
200
50
2
CD485B
180
180
200
50
2
CD486B
250
225
200
50
2
CD645
270
225
400
150
5
CD5194
80
70
200
50
2
CD5195
180
180
200
50
2
CD5196
250
225
200
50
2
VF(1)
IR1 at VRWM
IR2 at VRM
IR3 at VRWM
CAP
TYPE
TA+25
C
TA+25
C
TA+150
C
@VR
=4V
V dc
nA dc
A
A dc
pF
CD483B
0.8 - 1.0
25
100
5
CD485B
0.8 - 1.0
25
100
5
CD486B
0.8 - 1.0
25
100
5
CD645
0.8 - 1.0
50
50
25
2.0
CD5194
0.8 - 1.0
25
100
5
CD5195
0.8 - 1.0
25
100
5
CD5196
0.8 - 1.0
25
100
5
24 MILS
12 MILS
12
MILS
24
M
ILS
CD483B, CD485B, CD486B, CD645, CD5194
thru
CD5196
.3
.4
.5
.6
.7
.8
.9
1.0
1.1
1.2
1.3
VF - Forward Voltage (V)
FIGURE 2
Typical Forward Current
vs Forward Voltage
I F
-
Forward
Current
-
(
mA)
1000
100
10
1
0.1
150C
100C
25C
-65C
20
40
60
80
100 120 140
Percent of Reverse Working Voltage (%)
FIGURE 3
Typical Reverse Current
vs Reverse Voltage
I R
-
Reverse
Current
-
(
A)
1000
100
10
1
0.1
.01
.001
150C
100C
25C
-65C
NOTE :
All temperatures shown on graphs are
junction temperatures
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