NEC'
S
7.5 V UHF BAND
RF POWER SILICON LD-MOS FET
FEATURES
HIGH OUTPUT POWER:
P
out
= 40.0 dBm TYP., f = 900 MHz, V
DS
= 7.5 V,
P
out
= 40.5 dBm TYP., f = 460 MHz, V
DS
= 7.5 V,
HIGH POWER ADDED EFFICIENCY:
add
= 48% TYP., f = 900 MHz, V
DS
= 7.5 V,
add
= 50% TYP., f = 460 MHz, V
DS
= 7.5 V,
HIGH LINEAR GAIN:
G
L
= 15.0 dB TYP., f = 900 MHz, V
DS
= 7.5 V,
G
L
= 18.5 dB TYP., f = 460 MHz, V
DS
= 7.5 V,
SURFACE MOUNT PACKAGE:
5.7 x 5.7 x 1.1 mm MAX
SINGLE SUPPLY:
V
DS
= 2.8 to 8.0 V
NE5511279A
DESCRIPTION
NEC's NE5511279A is an N-Channel silicon power laterally
diffused MOSFET specially designed as the transmission
power amplifier for 7.5 V radio systems. Die are manu-
factured using NEC's NEWMOS1 technology and housed in
a surface mount package. This device can deliver 40.0 dBm
output power with 48% power added efficiency at 900 MHz
using a 7.5 V supply voltage.
UHF RADIO SYSTEMS
CELLULAR REPEATERS
TWO-WAY RADIOS
FRS/GMRS
FIXED WIRELESS
APPLICATIONS
California Eastern Laboratories
SYMBOL
PARAMETER
MIN
TYP
MAX
UNIT
TEST CONDITIONS
P
out
Output Power
38.5
40.0
-
dBm f = 900 MHz, V
DS
= 7.5 V,
I
D
Drain Current
-
2.5
-
A
P
in
= 27 dBm,
add
Power Added Efficiency
42
48
-
%
I
DSQ
= 400 mA (RF OFF)
G
L
Linear Gain
-
15.0
-
dB
P
in
= 5 dBm
P
out
Output Power
-
40.5
-
dBm f = 460 MHz, V
DS
= 7.5 V,
I
D
Drain Current
-
2.75
-
A
P
in
= 25 dBm,
add
Power Added Efficiency
-
50
-
%
I
DSQ
= 400 mA (RF OFF)
G
L
Linear Gain
-
18.5
-
dB
P
in
= 5 dBm
I
GSS
Gate to Source Leak Current
-
-
100
nA
V
GS
= 6.0 V
I
DSS
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
-
-
100
nA
V
DS
= 8.5 V
V
th
Gate Threshold Voltage
1.0
1.5
2.0
V
V
DS
= 4.8 V, I
DS
= 1.5 mA
R
th
Thermal Resistance
-
5
-
C/W Channel to Case
g
m
Transconductance
-
2.3
-
S
V
DS
= 3.5 V, I
DS
= 900 mA
BV
DSS
Drain to Source Breakdown Voltage
20
24
-
V
I
DSS
= 15 A
ELECTRICAL CHARACTERISTICS
(T
A
= 25C)
Notes:
DC performance is 100% tested. RF performance is tested on several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 79A
0.90.2
0.20.1
(Bottom View)
3.60.2
1.50.2
1.2 MAX.
0.8 MAX.
1.0 MAX.
Source
Gate
Drain
0.40.15
5.7 MAX.
5.7 MAX.
0.60.15
0.80.15
4.4 MAX.
4.2 MAX.
Source
Gate
Drain
W
3
2
1
0
0
1
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25 C)
SYMBOLS
PARAMETERS
UNITS RATINGS
V
DS
Drain Supply Voltage
2
V
20.0
V
GS
Gate Supply Voltage
V
6.0
I
D
Drain Current
A
3.0
P
TOT
Total Power Dissipation
W
20
T
CH
Channel Temperature
C
125
T
STG
Storage Temperature
C
-55 to +125
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. V
DS
must be used under 12 V on RF operation.
NE5511279A
PART NUMBER
QTY
NE5511279A-T1-A
12 mm wide embossed taping.
Gate pin faces the perforation side of
the tape.
1 Kpcs/Reel
NE5511279A-T1A-A
ORDERING INFORMATION
RECOMMENDED OPERATING LIMITS
SYMBOLS PARAMETERS
UNITS TYP MAX
V
DS
Drain to Source Voltage V
7.5
8.0
V
GS
Gate Supply Voltage
V
2.0
3.0
I
DS
Drain Current
1
A
2.5
3.0
P
IN
Input Power
dBm
27
30
f = 900 MHz, V
DS
= 7.5 V
4.0
1.7
6.1
0.5
0.5
Source
Gate
Drain
5.9
1.0
1.2
0.5
Through hole 0.2 33
P.C.B. LAYOUT
(Units in mm)
79A PACKAGE
Note:
Use rosin or other material to prevent solder from penetrating
through-holes.
f = 900 MHz
5
4
3
2
1
0
45
40
35
30
25
20
10
15
20
25
30
35
P
out
I
DS
add
d
100
75
50
25
0
TYPICAL PERFORMANCE CURVES
(T
A
= 25C)
Output Power
, P
out
(dBm)
OUTPUT POWER, DRAIN CURRENT,
d
,
add
vs. INPUT POWER
Input Power,P
in
(dBm)
Drain Efficiency
,
d (%)
Power
Added Efficiency
,
add (%)
f = 460 MHz
5
4
3
2
1
0
45
40
35
30
25
20
10
15
20
25
30
35
P
out
I
DS
add
d
100
75
50
25
0
Output Power
, P
out
(dBm)
OUTPUT POWER, DRAIN CURRENT,
d
,
add
vs. INPUT POWER
Input Power,P
in
(dBm)
Drain Efficiency
,
d (%)
Power
Added Efficiency
,
add (%)
Drain to Source Current, I
DS
(A)
Drain to Source Current, I
DS
(A)
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering methods
and conditions other than those recommended below, contact your nearby sales office.
NE5511279A
Soldering Method
Soldering Conditions
Condition Symbol
Infrared Reflow
Peak temperature (package surface temperature)
: 260C or below
Time at peak temperature
: 10 seconds or less
Time at temperature of 220C or higher
: 60 seconds or less
Preheating time at 120 to 180C
: 12030 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
IR260
VPS
Peak temperature (package surface temperature)
: 215C or below
Time at temperature of 200C or higher
: 25 to 40 seconds
Preheating time at 120 to 150C
: 30 to 60 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
VP215
Wave Soldering
Peak temperature (molten solder temperature)
: 260C or below
Time at peak temperature
: 10 seconds or less
Preheating temperature (package surface temperature) : 120C or below
Maximum number of flow processes
: 1 time
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
WS260
Partial Heating
Peak temperature (pin temperature)
: 350C or below
Soldering time (per pin of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
HS350-P3
Caution Do not use different soldering methods together (except for partial heating).
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
08/26/2003
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix A indicates
that the device is Pb-free. The AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL's understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
-AZ
Lead (Pb)
< 1000 PPM
Not Detected
(*)
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance
content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate
information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL
suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for
release.
In no event shall CEL's liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to
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See CEL Terms and Conditions for additional clarification of warranties and liability.
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