ELECTRICAL CHARACTERISTICS
(T
C
= 25
C)
PART NUMBER
NE6500379A
PACKAGE OUTLINE
79A
SYMBOLS
CHARACTERISTICS
UNITS
MIN
TYP
MAX
TEST CONDITIONS
P
1dB
Power Out at 1dB Gain Compression
dBm
35.0
G
L
Linear Gain
1
dB
9.0
10.0
ADD
Power Added Efficiency
%
50
I
D
Drain Current
A
1.0
I
DSS
Saturated Drain Current
A
4.5
V
DS
= 2.5 V; V
GS
= 0 V
V
P
Pinch-Off Voltage
V
-3.6
-2.6
-1.6
V
DS
= 2.5 V; I
DS
= 21 mA
R
TH
Thermal Resistance
C/W
5
6
Channel to Case
BV
GD
Gate-to-Drain Breakdown Voltage
V
17
I
GD
= 21 mA
NEC'
S
3W, L/S-BAND
MEDIUM POWER GaAs MESFET
FEATURES
LOW COST PLASTIC SURFACE MOUNT PACKAGE
Available on Tape and Reel
USABLE TO 2.7 GHz:
Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
PCS
HIGH OUTPUT POWER:
35 dBm TYP
HIGH LINEAR GAIN:
10 dB TYP at 1.9 GHz
LOW THERMAL RESISTANCE:
5 C/W
NE6500379A
DESCRIPTION
NEC's NE6500379A is a 3 W GaAs MESFET designed for
medium power Fixed Wireless Access, ISM, WLL, PCS, IMT-
2000, and return path MMDS transmitter applications. It is
capable of delivering 3 Watts of output power with high linear
gain, high efficiency and excellent linearity. Reliability and
performance uniformity are assured by NEC's stringent qual-
ity and control procedures
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 79A
Functional
Characteristics
Electrical DC
Characteristics
f = 1.9 GHz, V
DS
= 6.0 V
Rg = 30
I
DSQ
= 500 mA (RF OFF)
2
Notes:
1. Pin = 0 dBm
2. DC performance is tested 100%. Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1
reject for several samples.
Note: Unless otherwise specified, tolerance is
0.2 mm
T
E
9
X
Source
Gate
Drain
4.2 MAX
5.7 MAX
4.4 MAX
0.8 0.15
0.6 0.15
5.7 MAX
0.4 0.15
Source
Gate
Drain
1.2
MAX
1.0 MAX
3.6 0.2
0.8 MAX
0.9 0.2
0.2 0.1
1.5 0.2
BOTTOM VIEW
California Eastern Laboratories
ABSOLUTE MAXIMUM RATINGS
1
(T
C
= 25
C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
DS
Drain to Source Voltage
V
15
V
GS
Gate to Source Voltage
V
-7.0
I
DS
Drain Current
A
5.6
I
GS
Gate Current
mA
50
P
T
Total Power Dissipation
W
21
T
CH
Channel Temperature
C
150
T
STG
Storage Temperature
C
-65 to +150
RECOMMENDED OPERATING LIMITS
SYMBOLS
PARAMETERS
UNITS
TYP
MAX
V
DS
Drain to Source Voltage
V
6.0
6.0
T
CH
Channel Temperature
C
125
G
COMP
Gain Compression
dB
3.0
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
NE6500379A
PART NUMBER
QTY
NE6500379A-T1
1 K/Reel
NE6500379A
Bulk, 50 piece min.
ORDERING INFORMATION
Drain Current, I
D
(A)
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C)
Total Power Dissipation, P
D
(W)
DRAIN CURRENT vs.
DRAIN VOLTAGE
Drain Voltage, V
D
(V)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
Case Temperature, T
C
(
C)
Drain Current, I
D
(A)
Maximum Available Gain, G
MAG
(dB)
Transconductance, G
M
(mS)
MAXIMUM AVAILABLE GAIN vs.
FREQUENCY
Frequency, f (GHz)
TRANSCONDUCTANCE AND DRAIN
CURRENT vs. GATE VOLTAGE
Gate Voltage, V
G
(V)
22 W
18
C
25
20
15
10
5
0
150
100
50
0
R
TH
= 6
C/W
1.00
2.00
0.00
0.5
0.8
0.6
0.4
0.2
1.00
0.00
-3.50
-1.50
25.0
20.0
15.0
10.0
5.0
0.1
0.2
0.4
0.6
1.0
2.0
4.0
3 V
300 mA
6 V
500 mA
8 V
500 mA
4
3
2
1
5
0
0
1
3
5
6
4
2
V
GS
=
-0.50 V
0 V
-1.0 V
-1.5 V
-2.0 V
NE6500379A
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
C)
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
1
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
0.50
0.966
-174.30
2.139
85.82
0.014
10.23
0.880
176.31
0.32
21.74
0.60
0.967
-177.11
1.783
82.99
0.014
9.64
0.881
175.27
0.36
20.93
0.70
0.965
-179.62
1.531
80.36
0.014
10.32
0.881
174.08
0.45
20.24
0.80
0.965
178.38
1.343
78.11
0.015
10.26
0.882
173.23
0.50
19.66
0.90
0.965
176.58
1.192
75.93
0.015
10.85
0.881
172.33
0.56
19.12
1.00
0.965
174.96
1.072
73.74
0.015
11.62
0.880
171.34
0.64
18.65
1.10
0.965
173.44
0.975
71.58
0.015
11.65
0.881
170.32
0.69
18.17
1.20
0.965
172.10
0.895
69.70
0.015
12.25
0.881
169.56
0.73
17.77
1.30
0.965
170.80
0.825
67.81
0.015
12.72
0.880
168.73
0.80
17.41
1.40
0.965
169.61
0.765
65.81
0.015
12.90
0.879
167.80
0.84
17.04
1.50
0.965
168.44
0.716
63.89
0.015
13.20
0.881
166.90
0.86
16.75
1.60
0.966
167.32
0.672
62.25
0.015
13.85
0.881
166.23
0.92
16.46
1.70
0.966
166.26
0.632
60.58
0.015
14.68
0.880
165.51
1.00
16.22
1.80
0.966
165.26
0.596
58.64
0.015
14.92
0.877
164.64
1.06
14.46
1.90
0.966
164.32
0.566
56.79
0.015
15.56
0.880
163.73
1.08
13.97
2.00
0.967
163.43
0.540
55.24
0.015
15.70
0.882
163.14
1.08
13.70
2.10
0.968
162.52
0.513
53.75
0.015
17.08
0.880
162.60
1.13
13.00
2.20
0.967
161.56
0.488
51.90
0.015
16.80
0.876
161.72
1.22
12.19
2.30
0.968
160.76
0.468
50.11
0.015
17.63
0.876
160.81
1.27
11.72
2.40
0.968
160.00
0.450
48.58
0.016
18.37
0.881
160.18
1.26
11.55
2.50
0.969
159.26
0.432
47.36
0.016
19.74
0.881
159.90
1.29
11.19
2.60
0.969
158.55
0.413
45.84
0.015
19.89
0.878
159.26
1.34
10.76
2.70
0.970
157.78
0.397
44.14
0.015
20.56
0.877
158.32
1.42
10.32
2.80
0.970
157.08
0.385
42.59
0.015
21.83
0.882
157.46
1.41
10.16
2.90
0.970
156.48
0.372
41.43
0.015
23.56
0.883
157.13
1.44
9.88
3.00
0.971
155.74
0.359
40.09
0.016
24.26
0.881
156.56
1.47
9.56
3.10
0.970
155.08
0.346
38.46
0.016
25.44
0.879
155.69
1.57
9.04
3.20
0.972
154.43
0.336
37.25
0.015
27.74
0.885
154.96
1.54
9.03
3.30
0.971
153.91
0.327
35.97
0.016
29.52
0.885
154.33
1.61
8.55
3.40
0.971
153.33
0.316
34.75
0.016
31.71
0.882
153.69
1.68
8.13
3.50
0.973
152.84
0.308
33.35
0.017
33.06
0.882
152.89
1.56
8.21
3.60
0.974
152.20
0.301
32.01
0.018
32.99
0.884
152.34
1.48
8.14
3.70
0.973
151.72
0.292
30.79
0.018
32.12
0.883
151.99
1.54
7.76
3.80
0.974
151.28
0.282
29.50
0.018
33.04
0.880
151.43
1.54
7.53
3.90
0.973
150.86
0.273
27.94
0.019
31.76
0.877
150.64
1.61
7.12
4.00
0.974
150.75
0.266
27.01
0.019
32.12
0.886
150.34
1.52
7.23
NE6500379A
V
D
= 6.0 V, I
D
= 500 mA
Coordinates in Ohms
Frequency in GHz
V
D
=
3.0 V, I
D
= 300
mA
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
Note:
1. Gain Calculation:
MAG =
|S
21
|
|S
12
|
K - 1
).
2
(
K
= S
11
S
22
- S
21
S
12
When K
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K = 1 + |
| - |S
11
| - |S
22
|
2
2
2
2 |S
12
S
21
|
,
j50
j25
j10
0
-j10
-j25
-j50
-j100
j100
0
10
25
50
100
S11
0.5 GHz
S11
4.0 GHz
S22
4.0 GHz
S22
0.5 GHz
120
90
60
30
150
180
-150
-120
-90
-60
-30
0
S12
0.5 GHz
S12
4.0 GHz
S21
4.0 GHz
S21
0.5 GHz
Note: This file and many other s-parameter files can be downloaded from www.cel.com
NONLINEAR MODEL
Parameters
Q1
Parameters
Q1
VTO
-2.585
RG
0.2
VTOSC
0
RD
0.001
ALPHA
3
RS
0.001
BETA
1.28
RGMET
0
GAMMA
0
KF
0
GAMMADC
(2)
0.035
AF
1
Q
1.7
TNOM
27
DELTA
0.02
XTI
3
VBI
0.6
EG
1.43
IS
1e-14
VTOTC
0
N
1
BETATCE
0
RIS
0
FFE
1
RID
0
TAU
10e-12
CDS
0.5e-12
RDB
0.001
CBS
0
CGSO
(3)
25e-12
CGDO
(4)
4.5e-12
DELTA1
1
DELTA2
0.2
FC
0.5
VBR
Infinity
Parameter
Units
capacitance
picofarads
inductance
nanohenries
resistance
ohms
SCHEMATIC
(1) Series IV Libra TOM Model
The parameter in Libra corresponds to the parameter in PSpice:
(2) GAMMADC
GAMMA
(3) CGSO
CGS
(4) CGDO
CGD
FET NONLINEAR MODEL PARAMETERS
(1)
UNITS
MODEL RANGE
Frequency:
0.4 to 8 GHz
Bias:
V
DS
= 3 V to 8 V, I
D
= 300 mA to 500 mA
Date:
6/1/99
LG
RDX
0.2 ohms
RDBX
480
CBSX
RSX
100
0.2 ohms
LSX
0.001 nH
SOURCE
0.55 nH
0.015 nH
DRAIN
LD
LDX
0.68 nH
LGX
CGS PKG
0.1 pF
CDS PKG
0.1 pF
0.001 nH
GATE
Q1
NE6500379A
APPLICATION CIRCUIT (1.93 - 1.99 GHz)
T C
7 X
J1
P1
GND
RF
IN
J2
RF
OUT
V
G
J3
V
D
J4
C3
C5
C9
C11
C2
C8
C10
R1
R2
C1
C4
U1
C6
100637
NE6500379A-EV
.034
C12
C13
V
G
RF Input
RF Output
Er = 4.2
H = .028"
J3
V
D
J4
J2
C13
C6
C5
C14
C11
C9
C3
C2
C4
C7
C1
C8
C10
C12
R6
NE650379A
L = .890
W = .010
L = .874
W = .010
L = .140
W = .050
L = .200
W = .050
J1
NE6500379A
1
TF-100637
TEST CIRCUIT BLK
17
4
2-56 X 3/16 PHILLIPS PAN HEAD
16
2
MA101J
C2, C3
CASE 1100 pF CAP MURATA
15
1
MCR03J200
R1
0603 20 OHMS RESISTOR ROHM
14
2
100A470CP150X
C1, C14
CASE A 47 pF CAP ATC
13
1
100A4R3CP150X
C4
CASE A 4.3 pF CAP ATC
12
1
100A5R6CP150X
C5
CASE A 5.6 pF CAP ATC
11
1
100A0R5CP150X
C6
CASE A 0.5 pF CAP ATC
10
1
100A0R8CP150X
C7
CASE A 0.8 pF CAP ATC
9
2
TAJB475K010R
C12, C13
CASE B 4.7 uF CAP AVX
8
2
GRM40X7R104K025BL
C10, C11
0805 .1 uF CAP MURATA
7
2
GRM40C0G102J050BD
C8, C9
0805 1000 pF CAP MURATA
6
1
NE6500379A
U1
IC NEC
5
1
703401
P1
GROUND LUG CONCORD
4
1
1250-003
J3, J4
FEEDTHRU MURATA
3
2
2052-5636-02
J1, J2
FLANGE MOUNT JACK RECEPTACLE
2
NE6500379A PARTS LIST
Contact CEL Engineering for artwork
and more detailed information.
NE6500379A
Gain, G
A
(dB)
TYPICAL APPLICATION CIRCUIT PERFORMANCE at V
DS
= 3 V and V
DS
= 6 V
Gain, G
A
(dB)
GAIN AND PAE vs.
OUTPUT POWER
Output Power, P
OUT
(dBm)
GAIN AND PAE vs.
OUTPUT POWER
Output Power, P
OUT
(dBm)
Saturation Power, P
SAT
(dBm)
Gain, G
A
(dB)
Gain, G
A
(dB)
GAIN AND SATURATION POWER
vs. FREQUENCY
Frequency, f (GHz)
GAIN AND SATURATION POWER
vs. FREQUENCY
Frequency, f (GHz)
12
10
8
6
2
14
4
0
50
40
30
10
60
20
0
20
22
26
28
30
32
34
24
Gain, I
DSQ
= 200 mA
Gain, I
DSQ
= 600 mA
PAE, I
DSQ
= 200 mA
PAE, I
DSQ
= 600 mA
F
C
= 1.96 GHz,
V
DS
= 3 V
14
12
10
8
16
30.50
29.50
28.50
31.50
27.50
1.90
1.92
1.94
1.96
1.98
2.00
2.02
Gain, I
DSQ
= 100 mA
Gain, I
DSQ
= 800 mA
P
OUT
, I
DSQ
= 100 mA
P
OUT
, I
DSQ
= 800 mA
P
OUT
= 10 dBm for Gain, 23 dBm for P
SAT
, V
DS
= 3 V
14
12
10
8
16
36
35
34
37
33
1.90
1.92
1.94
1.96
1.98
2.00
2.02
Gain, I
DSQ
= 100 mA
Gain, I
DSQ
= 800 mA
P
OUT
, I
DSQ
= 100 mA
P
OUT
, I
DSQ
= 800 mA
P
OUT
= 17 dBm for Gain, 30 dBm for P
SAT
, V
DS
= 6 V
PAE (%)
PAE (%)
12
10
8
6
2
14
4
0
50
40
30
10
60
20
0
20
22
26
28
30
32
34
36
24
Gain, I
DSQ
= 200 mA
Gain, I
DSQ
= 600 mA
PAE, I
DSQ
= 200 mA
PAE, I
DSQ
= 600 mA
F
C
= 1.96 GHz,
V
DS
= 6 V
Saturation Power, P
SAT
(dBm)
4.0
1.7
6.1
0.5
0.5
Source
Drain
Gate
5.9
1.2
1.0
0.5
Through hole
0.2
33
P.C.B. LAYOUT
(Units in mm)
FOR 79A PACKAGE
NE6500379A
TYPICAL APPLICATION CIRCUIT PERFORMANCE at V
DS
= 3 V and V
DS
= 6 V
ACPR (dBc)
ACPR (dBc)
ACPR vs. OUTPUT POWER
Total Output Power, P
OUT
(dBm)
ACPR vs. OUTPUT POWER
Total Output Power, P
OUT
(dBm)
-40
-45
-50
-55
-60
-65
-35
23
24
25
26
27
28
29
30
31
32
33
I
DSQ
= 100 mA
I
DSQ
= 200 mA
I
DSQ
= 400 mA
I
DSQ
= 600 mA
I
DSQ
= 800 mA
F
C
= 1.96 GHz,
V
DS
= 3 V
64 CH IS95 CDMA
ACPR1
885KHz
ACPR2
885KHz
-40
-45
-50
-55
-60
-65
-35
23
25
27
29
31
33
35
I
DSQ
= 100 mA
I
DSQ
= 200 mA
I
DSQ
= 400 mA
I
DSQ
= 600 mA
I
DSQ
= 800 mA
F
C
= 1.96 GHz,
V
DS
= 6 V
64 CH IS95 CDMA
ACPR1
885KHz
ACPR2
125MHz
Third Order Intermodulation Distortion, IM
3
(dBc)
Third Order Intermodulation Distortion, IM
3
(dBc)
THIRD ORDER INTERMODULATION
DISTORTION vs. OUTPUT POWER
THIRD ORDER INTERMODULATION
DISTORTION vs. OUTPUT POWER
Total Output Power, P
OUT
(dBm)
-20
-25
-30
-35
-40
-45
-15
23
24
25
26
27
28
29
30
31
32
33
I
DSQ
= 100 mA
I
DSQ
= 200 mA
I
DSQ
= 400 mA
I
DSQ
= 600 mA
I
DSQ
= 800 mA
F
C
= 1.96 GHz,
V
DS
= 3 V
-25
-30
-35
-40
-45
-50
-20
23
25
27
29
31
33
F
C
= 1.96 GHz,
V
DS
= 6 V
I
DSQ
= 100 mA
I
DSQ
= 200 mA
I
DSQ
= 400 mA
I
DSQ
= 600 mA
I
DSQ
= 800 mA
Total Output Power, P
OUT
(dBm)
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
10/22/2002
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