INTERNAL BLOCK DIAGRAM
California Eastern Laboratories
UPD5702TU
NEC's 2.4 GHz
Si LD MOS POWER AMPLIFIER
FEATURES
MEDIUM OUTPUT POWER:
P
OUT
= +21 dBm TYP @P
IN
= -2 dBm, f = 2.45 GHz
ON CHIP OUTPUT POWER CONTROL FUNCTION
SINGLE SUPPLY VOLTAGE:
V
DS
= 3.0 V TYP
PACKAGED IN 8 PIN L2MM (2.0 X 2.2 X 0.5mm)
SUITABLE FOR HIGH- DENSITY SURFACE MOUNT
APPLICATIONS
1.9 GHZ Application Ex. PHS etc.
2.4 GHz application Ex. Bluetooth, Wireless LAN, etc.
General purpose medium power AGC amplifier
PART NUMBER
UPD5702TU
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
I
DS
Circuit Current, P
IN
= -5 dBm, P
OUT
= +20.5 dBm
mA
150
V
GS
Gate Bias Voltage, P
IN
= -5 dBm, P
OUT
= +20.5 dBm
V
2.0
P
OUT
Output Power, P
IN
= -5 dBm
dBm
20.5
PAE
Power Added Efficiency, P
IN
= -5 dBm, P
OUT
= +20.5 dBm
%
27
Padj1
Adjacent Channel Power 1, P
IN
= -5 dBm, P
OUT
= +20.5 dBm
dBc
-61
Padj2
Adjacent Channel Power 2, P
IN
= -5 dBm, P
OUT
= +20.5 dBm
dBc
-76
IRL
Input Return Loss, P
IN
= -20 dBm
dB
10
ORL
Output Return Loss, P
IN
= -20 dBm
dB
10
ISOL
Isolation, P
IN
= -20 dBm
dB
45
OBW
Occupied Bandwidth, P
IN
= -5 dBm, P
OUT
= +20.5 dBm
dB
TBD
ELECTRICAL CHARACTERISTICS
(T
A
= 25C, V
DS
= 3.0 V, f = 1.9 GHz, unless otherwise specified)
DESCRIPTION
NEC's UPD5702TU is a silicon LD MOS IC designed for use as
a power amplifier up to 2.4 GHz application. This IC consists of
two stage amplifiers. The device is packaged in a low cost,
surface mount 8 pin L2MM (Leadless Mini Mold) plastic pack-
age. Ideally suited for high density surface mount designs.
NEC's stringent quality assurance and test procedures ensure
the highest reliability and performance.
1
2
3
4
5
6
7
8
Pin2
Pin2
GND
Pout1
Pout2
Pout2
GND
Pin1
SYMBOLS
PARAMETERS
UNITS MIN TYP MAX
V
DS
Supply Voltage 1
V
2.7
3.0
3.6
V
GS
Supply Voltage 2
V
0.0
0.2
P
IN
Maximum Input Power
dBm
+5
I
D
Drain Current
mA
165
RECOMMENDED
OPERATING CONDITIONS
UPD5702TU
TYPICAL PERFORMANCE CURVES
(T
A
= 25C, f = 1.9 GHz, V
GS
= 2.0 V unless otherwise specified)
Circuit Current, I
DS
(mA)
Input Power, P
IN
(dBm)
OUTPUT POWER, GAIN AND
ADJACENT CHANNEL POWER
vs. INPUT POWER
Output Power, P
OUT
(dBm), Gain, G
A
(dB)
Input Power, P
IN
(dBm)
Adjacent Channel Power, P
adj
(dBc)
Pout
Gain
Padj (-900 KHz)
Padj (-600 KHz)
Padj (+600 KHz)
Padj (+900 KHz)
30
25
20
15
10
5
0
-15
-10
-5
0
5
10
-20
-30
-40
-50
-60
-70
-80
CIRCUIT CURRENT
vs. INPUT POWER
250
200
150
100
50
0
-15 -10
-5
0
5
10
V
DS
= 3.0 V,
V
GS
= 2.0 V,
f = 1.90 GHz,
P
IN
= -5 dB
PART NUMBER
QUANTITY
UPD5702TU-E2-A
TBD
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25C unless otherwise specified)
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
DS
Supply Voltage 1
V
6.0
V
GS
Supply Voltage
2
V
6.0
P
D
Power Dissipation
2
W
0.866
T
A
Operating Ambient Temp.
C
-40 to +85
T
STG
Storage Temp. Range
C
-65 to +150
P
IN(MAX)
Maximum Input Level
dBm
+10
T
j
Junction Temperature
C
+150
Notes:
1. Operation in excess of any one of these conditions may
result in permanent damage.
2. T
A
= 25C, mounted on 330 x 21 mm epoxy glass PWB.
PACKAGE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE TU
UPD5702TU
0.1
2.0
2.2
0.4
0.4
1.4
0.25 0.25
0.75
0.75
0.16
2.0
0.5
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
02/04/2004
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4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
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-AZ
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