2N6071, A, B
2N6073, A, B
2N6075, A, B
SENSITIVE GATE TRIAC
4.0 AMPS, 200 THRU 600 VOLTS
TO-126 CASE
Central
Semiconductor Corp.
TM
R0 (27-April 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6071, A, B
series types are silicon sensitive gate triacs
designed for such applications as light dimmers,
motor controls, heating controls and power
supplies.
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS: (TJ=25C unless otherwise noted)
2N6071
2N6073
2N6075
2N6071A
2N6073A
2N6075A
SYMBOL
2N6071B
2N6073B
2N6075B
UNITS
Peak Repetitive Off-State Voltage
VDRM, VRRM
200
400
600
V
RMS On-State Current (TC=85C)
IT(RMS)
4.0
A
Peak One Cycle Surge (60Hz, TJ=110C)
ITSM
30
A
I
2
t Value for Fusing (t=8.3ms)
I
2
t
3.7
A
2
s
Peak Gate Power (TC=85C)
PGM
10
W
Average Gate Power (t=8.3ms, TC=85C)
PG(AV)
0.5
W
Peak Gate Voltage (TC=85C)
VGM
5.0
V
Storage Temperature
Tstg
-40 to +150
C
Junction Temperature
TJ
-40 to +110
C
Thermal Resistance
JC
3.5
C/W
Thermal Resistance
JA
75
C/W
Maximum Lead Temperature
TL
260
C
ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted)
A Series
B Series
SYMBOL
TEST CONDITIONS
TYP MAX
TYP MAX
TYP MAX
UNITS
IDRM, IRRM
VD=Rated VDRM, VRRM, TJ=25C
10
10
10
A
IDRM, IRRM
VD=Rated VDRM, VRRM, TJ=110C
2.0
2.0
2.0
mA
IGT
VD=12V, RL=100, QUAD I, TJ=25C
30
5.0
3.0
mA
IGT
VD=12V, RL=100, QUAD II, TJ=25C
-
5.0
3.0
mA
IGT
VD=12V, RL=100, QUAD III, TJ=25C
30
5.0
3.0
mA
IGT
VD=12V, RL=100, QUAD IV, TJ=25C
-
10
5.0
mA
IGT
VD=12V, RL=100, QUAD I, TJ= -40C
60
20
15
mA
IGT
VD=12V, RL=100, QUAD II, TJ= -40C
-
20
15
mA
IGT
VD=12V, RL=100, QUAD III, TJ= -40C
60
20
15
mA
IGT
VD=12V, RL=100, QUAD IV, TJ= -40C
-
30
20
mA
IH
VD=12V, IT=1.0A, TJ=25C
30
15
15
mA
IH
VD=12V, IT=1.0A, TJ= -40C
70
30
30
mA
VGT
VD=12V, RL=100, TJ=25C, QUAD I, II, III, IV
2.0
2.0
2.0
V
VGT
VD=12V, RL=100, TJ= -40C, QUAD I, II, III, IV
2.5
2.5
2.5
V
VTM
ITM=6.0A
2.0
2.0
2.0
V
ton
ITM=14A, IGT=100mA
1.5
1.5
1.5
s
dv/dt
VD= Rated VDRM, ITM=5.7A, TJ=85C
5.0
5.0
5.0
V/s
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