56
Central
Central
Central
Central
Central
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
TM
SOT-23 CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N7002
type is a N-Channel Field Effect Transistor,
manufactured by the N-Channel DMOS
Process, designed for high speed pulsed
amplifier and driver applications.
Marking Code is 702.
MAXIMUM RATINGS (TA=25
o
C)
SYMBOL
UNITS
Drain-Source Voltage
VDS
60
V
Drain-Gate Voltage
VDG
60
V
Gate-Source Voltage
VGS
40
V
Continuous Drain Current (TC=25
o
C)
ID
115
mA
Continuous Drain Current (TC=100
o
C)
ID
75
mA
Continuous Source Current (Body Diode)
IS
115
mA
Maximum Pulsed Drain Current
IDM
800
mA
Maximum Pulsed Source Current
ISM
800
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-55 to +150
o
C
Thermal Resistance
JA
357
o
C/W
ELECTRICAL CHARACTERISTICS (TA=25
o
C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IGSSF
VGS=20V
100
nA
IGSSR
VGS=-20V
-100
nA
IDSS
VDS=60V, VGS=0
1.0
A
IDSS
VDS=60V, VGS=0, TA=125
o
C
500
A
ID(ON)
VDS
2VDS(ON), VGS=10V
500
mA
BVDSS
ID=10
A
60
105
V
VGS(th)
VDS=VGS, ID=250
A
1.0
2.1
2.5
V
VDS(ON)
VGS=10V, ID=500mA
3.75
V
VDS(ON)
VGS=5.0V, ID=50mA
1.5
V
rDS(ON)
VGS=10V, ID=500mA
3.7
7.5
2N7002
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
R2
57
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
rDS(ON)
VGS=10V, ID=500mA, TA=100
o
C
13.5
rDS(ON)
VGS=5.0V, ID=50mA
6.2
7.5
rDS(ON)
VGS=5.0V, ID=50mA, TA=100
o
C
13.5
gFS
VDS
2VDS(ON), ID=200mA
80
mmhos
Crss
VDS=25V, VGS=0, f=1.0MHz
5.0
pF
Ciss
VDS=25V, VGS=0, f=1.0MHz
50
pF
Coss
VDS=25V, VGS=0, f=1.0MHz
25
pF
ton
VDD=30V, ID=10V, RG=25
,
RL=25
20
ns
toff
VDD=30V, ID=10V, RG=25
, RL=25
20
ns
VSD
VGS=0V, IS=11.5mA
-1.5
V
All dimensions in inches (mm).
LEAD CODE:
1) GATE
2) SOURCE
3) DRAIN
R 1
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