MAXIMUM RATINGS (TA=25C)
SYMBOL
UNITS
Collector-Emitter Voltage
VCEO
32
V
Collector-Base Voltage
VCBO
32
V
Emitter-Base Voltage
VEBO
5.0
V
Collector Current
IC
100
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICES
VCE=32V
20
nA
ICES
VCE=32V, TA=150C
20
A
BVCEO
IC=2.0mA
32
V
BVEBO
IE=1.0A
5.0
V
VCE(SAT)
IC=10mA, IB=250A
0.25
V
VCE(SAT)
IC=50mA, IB=1.25mA
0.55
V
VBE(SAT)
IC=10mA, IB=250A
0.60
0.85
V
VBE(SAT)
IC=50mA, IB=1.25mA
0.68
1.05
V
VBE(ON)
VCE=5.0V, IC=2.0mA
0.60
0.75
V
Cob
VCB=10V, IC=0, f=1.0MHz
6.0
pF
NF
VCE=5.0V, IC=0.2mA, RS=2.0k
,
f=1.0kHz, BW=200Hz
6.0
dB
ton
VCC=10V, IC=10mA, RL=990
, IB1=IB2=1.0mA
150
ns
ton
VCC=10V, IC=10mA, RL=990
, IB1=IB2=1.0mA
800
ns
BCW61B
BCW61C
BCW61D
MIN
MAX
MIN
MAX
MIN
MAX
hFE
VCE=5.0V, IC=10
A
30
40
100
hFE
VCE=5.0V, IC=2.0mA
140
310
250
460
380
630
hFE
VCE=1.0V, IC=50mA
80
100 100
hfe
VCE=5.0V, IC=2.0mA, f=1.0kHz
175
350
250
500
350
700
BCW61B
BCW61C
BCW61D
SURFACE MOUNT
PNP SILICON TRANSISTOR
SOT-23 CASE
Central
Semiconductor Corp.
TM
R1 (20-February 2003)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCW61B
Series types are PNP Silicon Transistors
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for low level, low noise applications.
MARKING CODES: BCW61B : BB
BCW61C : BC
BCW61D : BD
Central
Semiconductor Corp.
TM
SOT-23 CASE - MECHANICAL OUTLINE
BCW61B
BCW61C
BCW61D
SURFACE MOUNT
PNP SILICON TRANSISTOR
R1 (20-February 2003)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
MARKING CODES: BCW61B : BB
BCW61C : BC
BCW61D : BD
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