MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Continuous Reverse Voltage
VR
30
V
Continuous Forward Current
IF
200
mA
Peak Repetitive Forward Current
IFRM
300
mA
Forward Surge Current, tp=10ms
IFSM
600
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ, Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MAX
UNITS
IR
VR=25V
2.0
A
VF
IF=0.1mA
240
mV
VF
IF=1.0mA
320
mV
VF
IF=10mA
400
mV
VF
IF=30mA
500
mV
VF
IF=100mA
800
mV
Cd
VR=1.0V, f=1.0 MHz
10
pF
trr
IF=IR=10mA, Irr=1.0mA, RL=100
5.0
ns
CBAT54
CBAT54A
CBAT54C
CBAT54S
SURFACE MOUNT
SILICON SCHOTTKY DIODES
SOT-23 CASE
Central
Semiconductor Corp.
TM
R0 (13-January 2005)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBAT54
Series types are Silicon Schottky Diodes in an
SOT-23 Surface Mount Package.
CBAT54:
SINGLE
MARKING CODE: CL4
CBAT54A:
DUAL, COMMON ANODE
MARKING CODE: CL42
CBAT54C:
DUAL, COMMON CATHODE
MARKING CODE: CL43
CBAT54S:
DUAL, IN SERIES
MARKING CODE: CL44
Central
Semiconductor Corp.
TM
CBAT54
CBAT54A
CBAT54C
CBAT54S
SURFACE MOUNT
SILICON SCHOTTKY DIODES
R0 (13-January 2005)
SOT-23 CASE - MECHANICAL OUTLINE
MARKING
CODE: CL43
MARKING
CODE: CL44
MARKING
CODE: CL4
MARKING
CODE: CL42
CBAT54
CBAT54A
CBAT54C
CBAT54S
1) Anode
1) Cathode D2
1) Anode D2
1) Anode D2
2) No Connection
2) Cathode D1
2) Anode D1
2) Cathode D1
3) Cathode
3) Anode D1, Anode D2
3) Cathode D1, Cathode D2
3) Anode D1, Cathode D2
2
3
1
D1
D2
2
3
1
D1
D2
2
3
1
D1
D2
2
3
1
LEAD CODE:
LEAD CODE:
LEAD CODE:
LEAD CODE:
PDF 
ZIP