MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Continuous Reverse Voltage
VR
30
V
Continuous Forward Current
IF
200
mA
Peak Repetitive Forward Current
IFRM
300
mA
Forward Surge Current, tp=10ms
IFSM
600
mA
Power Dissipation
PD
250
mW
Operating and Storage
Junction Temperature
TJ, Tstg
-65 to +150
C
Thermal Resistance
JA
500
C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MAX
UNITS
IR
VR=25V
2.0
A
VF
IF=0.1mA
240
mV
VF
IF=1.0mA
320
mV
VF
IF=10mA
400
mV
VF
IF=30mA
500
mV
VF
IF=100mA
800
mV
Cd
VR=1.0V, f=1.0 MHz
10
pF
trr
IF=IR=10mA, Irr=1.0mA, RL=100
5.0
ns
CBAT54W
CBAT54AW
CBAT54CW
CBAT54SW
SURFACE MOUNT
SILICON SCHOTTKY DIODES
SOT-323 CASE
Central
Semiconductor Corp.
TM
R0 (24-February 2005)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBAT54W
Series types are Silicon Schottky Diodes in an
SOT-323 Surface Mount Package.
CBAT54W:
SINGLE
MARKING CODE: C4L
CBAT54AW:
DUAL, COMMON ANODE
MARKING CODE: C42
CBAT54CW:
DUAL, COMMON CATHODE
MARKING CODE: C4C
CBAT54SW:
DUAL, IN SERIES
MARKING CODE: C44
Central
Semiconductor Corp.
TM
CBAT54W
CBAT54AW
CBAT54CW
CBAT54SW
SURFACE MOUNT
SILICON SCHOTTKY DIODES
R0 (24-February 2005)
SOT-323 CASE - MECHANICAL OUTLINE
MARKING
CODE: C4C
MARKING
CODE: C44
MARKING
CODE: C4L
MARKING
CODE: C42
CBAT54W
CBAT54AW
CBAT54CW
CBAT54SW
1) Anode
1) Cathode D2
1) Anode D2
1) Anode D2
2) No Connection
2) Cathode D1
2) Anode D1
2) Cathode D1
3) Cathode
3) Anode D1, Anode D2
3) Cathode D1, Cathode D2
3) Anode D1, Cathode D2
LEAD CODE:
LEAD CODE:
LEAD CODE:
LEAD CODE:
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