MAXIMUM RATINGS (TA=25C)
CBR1-
CBR1-
CBR1-
CBR1-
CBR1-
SYMBOL
D020S
D040S
D060S
D080S
D100S
UNITS
Peak Repetitive Reverse Voltage
VRRM
200
400
600
800
1000
V
DC Blocking Voltage
VR
200
400
600
800
1000
V
RMS Reverse Voltage
VR(RMS)
140
280
420
560
700
V
Average Forward Current (TA=50C)
IO
1.0
A
Peak Forward Surge Current
IFSM
50
A
Rating for Fusing (t<8.35ms)
I t
10
As
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IR
VR=Rated VRRM
10
A
IR
VR=Rated VRRM, TA=125C
0.5
mA
VF
IF=1.0A
1.1
V
CJ
VR=4.0V, f=1.0MHz
25
pF
CBR1-D020S SERIES
SURFACE MOUNT
1 AMP DUAL IN LINE
SILICON BRIDGE RECTIFIER
SMDIP CASE
Central
Semiconductor Corp.
TM
R2 (13-November 2002)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBR1-D020S
series types are silicon full wave bridge rectifiers
mounted in a durable epoxy surface mount
molded case, utilizing glass passivated chips.
NOTE: Also available in Fast Recovery, please
contact factory for details.
MARKING CODE: FULL PART NUMBER
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