DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMDD2004
type is a high voltage silicon switching diode
manufactured by the epitaxial planar process,
epoxy molded in a SUPERminiTM surface mount
package, designed for applications requiring high
voltage capability. Marking code is C24.
MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Continuous Reverse Voltage
VR
240
V
Peak Repetitive Reverse Voltage
VRRM
300
V
Peak Repetitive Reverse Current
IO
200
mA
Continuous Forward Current
IF
225
mA
Peak Repetitive Forward Current
IFRM
625
mA
Forward Surge Current, tp=1 sec.
IFSM
4000
mA
Forward Surge Current, tp=1 sec.
IFSM
1000
mA
Power Dissipation
PD
250
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
500
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNIT
BVR
IR=100A
300
V
IR
VR=240V
100
nA
IR
VR=240V, TA=150C
100
A
VF
IF=100mA
1.0
V
CT
VR=0, f=1 MHz
5.0
pF
trr
IF=IR=30mA, Rec. To 3.0mA, RL=100
50
ns
CMDD2004
SUPERminiTM
SURFACE MOUNT
HIGH VOLTAGE SWITCHING DIODE
Central
Semiconductor Corp.
TM
R1 ( 7-August 2001)
SOD-323 CASE
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