Central
Central
Central
Central
Central
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
TM
130
SOT-23 CASE
CMPD1001
CMPD1001A
CMPD1001S
HIGH CURRENT
SWITCHING DIODE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPD1001 series types are silicon switching
diodes manufactured by the epitaxial planar
process, designed for applications requiring
high current capability.
The following configurations are available:
CMPD1001
SINGLE
MARKING CODE: L20
CMPD1001S
DUAL, IN SERIES
MARKING CODE: L21
CMPD1001A
DUAL, COMMON ANODE
MARKING CODE: L22
MAXIMUM RATINGS (TA=25oC)
SYMBOL
UNITS
Continuous Reverse Voltage
VR
90
V
Continuous Forward Current
IF
250
mA
Peak Repetitive Forward Current
IFRM
600
mA
Peak Repetitive Reverse Current
IRRM
600
mA
Forward Surge Current, tp=1
s
IFSM
6000
mA
Forward Surge Current, tp=1 s
IFSM
1000
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
oC
Thermal Resistance
JA
357
oC/W
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNIT
BVR
IR=100
A
90
V
IR
VR=90V
100
nA
IR
VR=90V, TA=150oC
100
A
VF
IF=10mA
0.75
V
R2
131
NO
CONNECTION
CMPD1001
CMPD1001S
CMPD1001A
C1
C2
SYMBOL
TEST CONDITIONS
MIN
MAX
UNIT
VF
IF=50mA
0.84
V
VF
IF=100mA
0.90
V
VF
IF=200mA
1.00
V
VF
IF=400mA
1.25
V
CT
VR=0, f=1 MHz
35
pF
trr
IF=IR=30mA, RECOV. TO 3.0mA, RL=100
50
ns
All dimensions in inches (mm).
A1, A2
C
A
A1, C2
C1
A2
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