132
Central
Central
Central
Central
Central
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
TM
CMPD2003
CMPD2004
CMPD2004S
HIGH VOLTAGE
SWITCHING DIODE
SOT-23 CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPD2003, CMPD2004, CMPD2004S types
are silicon switching diodes manufactured by
the epitaxial planar process, designed for
applications requiring high voltage capability.
The following configurations are available:
CMPD2003
SINGLE
MARKING CODE: A82
CMPD2004
SINGLE
MARKING CODE: D53
CMPD2004S
DUAL, IN SERIES
MARKING CODE: DB6
MAXIMUM RATINGS (TA=25oC)
CMPD2004
SYMBOL
CMPD2003
CMPD2004S UNITS
Continuous Reverse Voltage
VR
200
240
V
Peak Repetitive Reverse Voltage
VRRM
250
300
V
Peak Repetitive Reverse Current
IO
200
200
mA
Continuous Forward Current
IF
250
225
mA
Peak Repetitive Forward Current
IFRM
625
625
mA
Forward Surge Current, tp=1
s
IFSM
4000
4000
mA
Forward Surge Current, tp=1 s
IFSM
1000
1000
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
oC
Thermal Resistance
JA
357
oC/W
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
CMPD2004
CMPD2003
CMPD2004S
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
UNIT
BVR
IR=100
A
250
300
V
IR
VR=200V
100
-
nA
IR
VR=200V, TA=150oC
100
-
A
IR
VR=240V
-
100
nA
IR
VR=240V, TA=150oC
-
100
A
VF
IF=100mA
1.0
1.0
V
R2
133
CMPD2004
CMPD2003
CMPD2004S
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
UNIT
VF
IF=200mA
1.25
-
V
CT
VR=0, f=1 MHz
5.0
5.0
pF
trr
IF=IR=30mA, RECOV. TO 3.0mA,
RL=100
50
50
ns
All dimensions in inches (mm).
CMPD2003
CMPD2004
CMPD2004S
A1, C2
C
A
C1
A2
NO
CONNECTION
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