140
Central
Central
Central
Central
Central
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
TM
SOT-23 CASE
The following configurations are available:
CMPD5001
SINGLE
MARKING CODE: DA2
CMPD5001S
DUAL, IN SERIES
MARKING CODE: D49
MAXIMUM RATINGS (TA=25oC)
SYMBOL
UNITS
Continuous Reverse Voltage
VR
120
V
Continuous Forward Current
IF
400
mA
Peak Repetitive Forward Current
IFRM
800
mA
Peak Repetitive Reverse Current
IRRM
600
mA
Forward Surge Current, tp=1
s
IFSM
6000
mA
Forward Surge Current, tp=1 s
IFSM
1500
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
oC
Thermal Resistance
JA
357
oC/W
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX UNITS
BVR
IR=1.0mA
120
175
V
IR
VR=90V
100
nA
IR
VR=90V, TA=150oC
100
A
VF
IF=10mA
0.75
V
VF
IF=50mA
0.84
V
VF
IF=100mA
0.90
V
VF
IF=200mA
1.00
V
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPD5001 series types are silicon switching
diodes manufactured by the epitaxial planar
process, designed for switching inductive load
applications requiring extremely high current
capability.
CMPD5001
CMPD5001S
HIGH CURRENT
INDUCTIVE LOAD
SWITCHING DIODE
R2
141
SYMBOL
TEST CONDITIONS
MIN
MAX UNITS
VF
IF=400mA
1.25
V
CT
VR=0, f=1 MHz
35
pF
trr
IF=IR=30mA, RECOV. TO 1.0mA, RL=100
60
ns
trr
IF=IR=10mA, RECOV. TO 1.0mA, RL=100
50
ns
All dimensions in inches (mm).
CMPD5001
CMPD5001S
C
A1, C2
A
NO
CONNECTION
A2
C1
PDF 
ZIP