DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPD6001
series types are silicon switching diodes manu-
factured by the epitaxial planar process,
designed for switching applications requiring a
extremely low leakage diode.
The following configurations are available:
MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Continuous Reverse Voltage
VR
75
V
Peak Repetitive Reverse Voltage
VRRM
100
V
Continuous Forward Current
IF
250
mA
Peak Repetitive Forward Current
IFRM
250
mA
Forward Surge Current, tp=1 sec.
IFSM
4000
mA
Forward Surge Current, tp=1 sec.
IFSM
1000
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
IR
VR=75V
500
pA
VBR
IR=100A
100
V
VF
IF=1.0mA
0.85
V
VF
IF=10mA
0.95
V
VF
IF=100mA
1.1
V
CT
VR=0, f =1.0 MHz
2.0
pF
trr
IR=IF=10mA, RL=100, Rec. to 1.0mA
3.0
s
CMPD6001
CMPD6001A
CMPD6001C
CMPD6001S
SURFACE MOUNT
LOW LEAKAGE
SWITCHING DIODE
SOT-23 CASE
Central
Semiconductor Corp.
TM
R1 ( 01-Mar 2001)
CMPD6001
SINGLE
MARKING CODE: ULO
CMPD6001A
DUAL, COMMON ANODE
MARKING CODE: ULA
CMPD6001C
DUAL, COMMON CATHODE
MARKING CODE: ULC
CMPD6001S
DUAL, IN SERIES
MARKING CODE: ULS
PDF 
ZIP