MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Continuous Reverse Voltage
VR
75
V
Peak Repetitive Reverse Voltage
VRRM
120 V
Continuous Forward Current
IF
250
mA
Peak Repetitive Forward Current
IFRM
250
mA
Forward Surge Current, tp=1.0 s
IFSM
4000
mA
Forward Surge Current, tp=1.0 ms
IFSM
2000
mA
Forward Surge Current, tp=1.0 s
IFSM
1000
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ, Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
BVR
IR=100A
120
150
V
IR
VR=20V
25 nA
IR
VR=75V
5.0
A
VF
IF=10mA
0.720
0.850
V
VF
IF=100mA
0.915
0.970
V
CT
VR=0V, f=1.0 MHz
2.0
pF
trr
IR=IF=10mA, RL=100, Rec. to 1.0 mA
4.0
ns
CMPD914E
ENHANCED SPECIFICATION
SURFACE MOUNT
HIGH SPEED
SILICON SWITCHING DIODE
SOT-23 CASE
Central
Semiconductor Corp.
TM
R2 (6-August 2003)
DESCRIPTION:
The Central Semiconductor CMPD914E is an
Enhanced version of the CMPD914 High Speed
Switching Diode in a SOT-23 surface mount
package, designed for high speed applications.
MARKING CODE: C5DE
FEATURED ENHANCED SPECIFICATIONS:
BVR from 100V min to 120V min. (150V TYP)
VF from 1.0V max to 0.85V max. (0.72V TYP)
Enhanced specification.
Additional Enhanced specification.
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