Central
Central
Central
Central
Central
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
TM
168
SOT-23 CASE
CMPT3640
PNP SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPT3640 type is an PNP silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for saturated switching applications.
Marking code is C2J.
MAXIMUM RATINGS (TA=25
o
C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
12
V
Collector-Emitter Voltage
VCEO
12
V
Emitter-Base Voltage
VEBO
4.0
V
Collector Current
IC
80
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
o
C
Thermal Resistance
JA
357
o
C/W
ELECTRICAL CHARACTERISTICS (TA=25
o
C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICES
VCE=6.0V
10
nA
ICES
VCE=6.0V, TA=65
o
C
10
A
IB
VCE=6.0V, VEB=0
10
nA
BVCBO
IC=100
A
12
V
BVCEO
IC=10mA
12
V
BVEBO
IE=100
A
4.0
V
VCE(SAT)
IC=10mA, IB=1.0mA
0.20
V
VCE(SAT)
IC=50mA, IB=5.0mA
0.60
V
VCE(SAT)
IC=10mA, IB=1.0mA, TA=65
o
C
0.25
V
VBE(SAT)
IC=10mA, IB=0.5mA
0.75
0.95
V
VBE(SAT)
IC=10mA, IB=1.0mA
0.80
1.00
V
VBE(SAT)
IC=50mA, IB=5.0mA
1.50
V
hFE
VCE=0.3V, IC=10mA
30
120
169
R2
SYMBOL
TEST CONDITIONS
MIN
MAX UNITS
hFE
VCE=1.0V, IC=50mA
20
fT
VCE=5.0V, IC=10mA, f=100MHz
500
MHz
Cob
VCB=5.0V, IE=0, f=1.0MHz
3.5
pF
Cib
VBE=0.5V, IC=0, f=1.0MHz
3.5
pF
td
VCC=6.0V, VBE=1.9, IC=50mA, IB1=5.0mA
10
ns
tr
VCC=6.0V, VBE=1.9, IC=50mA, IB1=5.0mA
30
ns
ts
VCC=6.0V, IC=50mA, IB1=IB2=5.0mA
20
ns
tf
VCC=6.0V, IC=50mA, IB1=IB2=5.0mA
12
ns
ton
VCC=6.0V, VBE=1.9, IC=50mA, IB1=5.0mA
25
ns
ton
VCC=1.5V, IC=10mA, IB1=0.5mA
60
ns
toff
VCC=6.0V, VBE=1.9, IC=50mA, IB1=5.0mA
35
ns
toff
VCC=1.5V, IC=10mA, IB1=IB2=0.5mA
75
ns
All dimensions in inches (mm).
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
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