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Электронный компонент: CMPT4403

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MAXIMUM RATINGS: (TA=25C)
SYMBOL
CMPT4401
CMPT4403
UNITS
Collector-Base Voltage
VCBO
60
40
V
Collector-Emitter Voltage
VCEO
40
40
V
Emitter-Base Voltage
VEBO
6.0
5.0
V
Continuous Collector Current
IC
600
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
CMPT4401
CMPT4403
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
UNITS
ICEV
VCE=35V, VEB=0.4V
0.1
0.1
A
IBEV
VCE=35V, VEB=0.4V
0.1
0.1
A
BVCBO
IC=100A
60
40
V
BVCEO
IC=1.0mA
40
40
V
BVEBO
IE=100A
6.0
5.0
V
VCE(SAT) IC=150mA, IB=15mA
0.40
0.40
V
VCE(SAT) IC=500mA, IB=50mA
0.75
0.75
V
VBE(SAT) IC=150mA, IB=15mA
0.75
0.95
0.75
0.95
V
VBE(SAT) IC=500mA, IB=50mA
1.2
1.3
V
hFE
VCE=1.0V, IC=0.1mA
20
30
hFE
VCE=1.0V, IC=1.0mA
40
60
hFE
VCE=1.0V, IC=10mA
80
100
CMPT4401 NPN
CMPT4403 PNP
COMPLEMENTARY
SILICON TRANSISTORS
SOT-23 CASE
Central
Semiconductor Corp.
TM
R4 (26-September 2002)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT4401,
CMPT4403 types are complementary silicon
transistors manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for small signal general
purpose amplifier and switching applications.
MARKING CODES:
CMPT4401: C2X
CMPT4403: C2T
Central
Semiconductor Corp.
TM
CMPT4401 NPN
CMPT4403 PNP
COMPLEMENTARY
SILICON TRANSISTORS
R4 (26-September 2002)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
MARKING CODES:
CMPT4401: C2X
CMPT4403: C2T
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
CMPT4401
CMPT4403
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
UNITS
hFE
VCE=1.0V, IC=150mA
100
300
-
-
hFE
VCE=2.0V, IC=150mA
-
-
100
300
hFE
VCE=2.0V, IC=500mA
40
20
fT
VCE=10V, IC=20mA, f=100MHz
250
200
MHz
Cob
VCB=5.0V, IE=0, f=1.0MHz
6.5
8.5
pF
Cib
VBE=0.5V, IC=0, f=1.0MHz
30
30
pF
hie
VCE=10V, IC=1.0mA, f=1.0kHz
1.0
15
1.5
15
k
hre
VCE=10V, IC=1.0mA, f=1.0kHz
0.1
8.0
0.1
8.0
x10-4
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
40
500
60
500
hoe
VCE=10V, IC=1.0mA, f=1.0kHz
1.0
30
1.0
100
mhos
td
VCC=30V, VBE=2.0, IC=150mA, IB1=15mA
15
15
ns
tr
VCC=30V, VBE=2.0, IC=150mA, IB1=15mA
20
20
ns
ts
VCC=30V, IC=150mA, IB1=IB2=15mA
225
225
ns
tf
VCC=30V, IC=150mA, IB1=IB2=15mA
30
30
ns
SOT-23 CASE - MECHANICAL OUTLINE