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Электронный компонент: CMPT5086

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Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
TM
178
SOT-23 CASE
CMPT5086
CMPT5087
PNP SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPT5086, CMPT5087 types are PNP silicon
transistors manufactured by the epitaxial
planar process, epoxy molded in a surface
mount package, designed for applications
requiring high gain and low noise.
Marking Codes are C2P and C2Q
Respectively.
MAXIMUM RATINGS (TA=25
o
C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
3.0
V
Collector Current
IC
50
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
o
C
Thermal Resistance
JA
357
o
C/W
ELECTRICAL CHARACTERISTICS (TA=25
o
C unless otherwise noted)
CMPT5086
CMPT5087
SYMBOL
TEST CONDITIONS
MIN MAX
MIN MAX
UNITS
ICBO
VCB=10V
10
10
nA
ICBO
VCB=35V
50
50
nA
BVCBO
IC=100
A
50
50
V
BVCEO
IC=1.0mA
50
50
V
BVEBO
IE=100
A
3.0
3.0
V
VCE(SAT)
IC=10mA, IB=1.0mA
0.30
0.30
V
VBE(SAT)
IC=10mA, IB=1.0mA
0.85
0.85
V
hFE
VCE=5.0V, IC=0.1mA
150 500
250
800
hFE
VCE=5.0V, IC=1.0mA
150
250
hFE
VCE=5.0V, IC=10mA
150
250
fT
VCE=5.0V, IC=500
A, f=20MHz 40
40
MHz
Cob
VCB=5.0V, IE=0, f=1.0MHz
4.0
4.0
pF
hfe
VCE=5.0V, IC=1.0mA, f=1.0kHz 150 600
250
900
179
R2
CMPT5086
CMPT5087
SYMBOL
TEST CONDITIONS
MIN MAX
MIN MAX UNITS
NF
VCE=5.0V, IC=20mA, RS=10k
f=10Hz to 15.7kHz
3.0
2.0
dB
NF
VCE=5.0V, IC=100
A, RS=3.0k
,
3.0
2.0
dB
f=1.0kHz
All dimensions in inches (mm).
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR