DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT591E
type is a PNP silicon transistor manufactured by
the epitaxial planar process, epoxy molded in a
surface mount package, designed for high
current, general purpose amplifier applications.
Marking Code is C59.
MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
5.0
V
Collector Current
IC
1.0
A
Base Current
IB
200
mA
Collector Current (Peak)
ICM
2.0
A
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=60V
100
nA
IEBO
VEB=4.0V
100
nA
BVCBO
IC=100A
80
V
BVCEO
IC=10mA
60
V
BVEBO
IE=100A
5.0
V
VCE(SAT)
IC=500mA, IB=50mA
0.20
V
VCE(SAT)
IC=1.0A, IB=100mA
0.40
V
VBE(SAT)
IC=1.0A, IB=100mA
1.1
V
VBE(ON)
VCE=5.0V, IC=1.0A
1.0
V
hFE
VCE=5.0V, IC=1.0mA
200
hFE
VCE=5.0V, IC=500mA
200
600
hFE
VCE=5.0V, IC=1.0A
50
hFE
VCE=5.0V, IC=2.0A
15
fT
VCE=10V, IC=50mA, f=100MHz
150
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
10
pF
CMPT591E
SURFACE MOUNT
PNP SILICON TRANSISTOR
SOT-23 CASE
Central
Semiconductor Corp.
TM
R2 ( 30-August 2001)
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