CMPTA13
CMPTA14 NPN
CMPTA63
CMPTA64 PNP
SILICON COMPLEMENTARY
DARLINGTON TRANSISTORS
SOT-23 CASE
Central
Semiconductor Corp.
TM
R4 (26-September 2002)
Description:
The CENTRAL SEMICONDUCTOR CMPTA13,
CMPTA63 series types are complementary
silicon darlington transistors manufactured by
the epitaxial planar process, epoxy molded in a
surface mount package, designed for
applications requiring extremely high gain.
MARKING CODES:
CMPTA13: C1M
CMPTA14: C1N
CMPTA63: C2U
CMPTA64: C2V
MAXIMUM RATINGS (TA=25C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCES
30
V
Emitter-Base Voltage
VEBO
10
V
Continuous Collector Current
IC
500
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=30V
100
nA
IEBO
VBE=10V
100
nA
BVCES
IC=100A
30
V
VCE(SAT)
IC=100mA, IB=0.1mA
1.5
V
VBE(ON)
VCE=5.0V, IC=100mA
2.0
V
hFE
VCE=5.0V, IC=10mA (CMPTA13, CMPTA63)
5,000
hFE
VCE=5.0V, IC=10mA (CMPTA14, CMPTA64)
10,000
hFE
VCE=5.0V, IC=100mA (CMPTA13, CMPTA63)
10,000
hFE
VCE=5.0V, IC=100mA (CMPTA14, CMPTA64)
20,000
fT
VCE=5.0V, IC=10mA, f=100MHz
125
MHz
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