CMPDM7002A
N-CHANNEL
ENHANCEMENT-MODE
SURFACE MOUNT MOSFET
SOT-23 CASE
Central
Semiconductor Corp.
TM
DESCRIPTION:
The
CENTRAL
SEMICONDUCTOR
CMPDM7002A is special version of the 2N7002
Enhancement-mode N-Channel Field Effect
Transistor, manufactured by the N-Channel
DMOS Process, designed for high speed pulsed
amplifier and driver applications. This special
device offers low rDS(ON) and low VDS (ON).
Marking Code is C702A.
MAXIMUM RATINGS (TA=25C)
SYMBOL
UNITS
Drain-Source Voltage
VDS
60
V
Drain-Gate Voltage
VDG
60
V
Gate-Source Voltage
VGS
40
V
Continuous Drain Current
ID
280
mA
Continuous Source Current (Body Diode)
IS
280
mA
Maximum Pulsed Drain Current
IDM
1.5
A
Maximum Pulsed Source Current
ISM
1.5
A
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
IGSSF
VGS=20V, VDS=0V
100
nA
IGSSR
VGS=20V, VDS=0V
100
nA
IDSS
VDS=60V, VGS=0V
1.0
A
IDSS
VDS=60V, VGS=0V, Tj=125C
500
A
ID(ON)
VGS=10V, VDS
2VDS(ON)
500
mA
BVDSS
VGS=0V, ID=10A
60
V
VGS(th)
VDS=VGS, ID=250A
1.0
2.5
V
VDS(ON)
VGS=10V, ID=500mA
1.0
V
VDS(ON)
VGS=5.0V, ID=50mA
0.15
V
rDS(ON)
VGS=10V, ID=500mA
2.0
rDS(ON)
VGS=10V, ID=500mA, Tj=125C
3.5
rDS(ON)
VGS=5.0V, ID=50mA
3.0
rDS(ON)
VGS=5.0V, ID=50mA, Tj=125C
5.0
gFS
VDS
2VDS(ON), ID=200mA
80
mmhos
Crss
VDS=25V, VGS=0, f=1.0MHz
5.0
pF
Ciss
VDS=25V, VGS=0, f=1.0MHz
50
pF
Coss
VDS=25V, VGS=0, f=1.0MHz
25
pF
ton
VDD=30V, VGS=10V, ID=200mA,
20
ns
toff
RG=25
, RL=150
20
ns
VSD
VGS=0V, IS=400mA
1.2
V
R0 ( 05-December 2001)
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