MAXIMUM RATINGS (TA=25C)
CBR50- CBR50-
CBR50- CBR50- CBR50-
SYMBOL
020P
040P
060P
080P
100P
UNITS
Peak Repetitive Reverse Voltage
VRRM
200
400
600
800
1000
V
DC Blocking Voltage
VR
200
400
600
800
1000
V
RMS Reverse Voltage
VR(RMS)
140
280
420
560
700
V
Average Forward Current (TC=55C)
IO
50
A
Peak Forward Surge Current
IFSM
400
A
Operating and Storage
Junction Temperature
TJ, Tstg
-65 to +150
C
Thermal Resistance
JC
1.5
C/W
RMS Isolation Voltage (case to lead)
Viso
2500
Vac
ELECTRICAL CHARACTERISTICS PER DIODE (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
TYP
MAX
UNITS
IR
VR=Rated VRRM, TC=25C
5.0
A
IR
VR=Rated VRRM, TC=125C
500
A
VF
IF=25A
1.1
V
CJ
VR=4.0V, f=1.0MHz
300
pF
CBR50-020P SERIES
50 AMP
SILICON BRIDGE RECTIFIER
200 thru 1000 VOLTS
CASE FP
Central
Semiconductor Corp.
TM
R0 (31-August 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBR50-020P
series types are silicon single phase full wave
bridge rectifiers designed for general purpose
applications. The molded epoxy case has a built in
metal baseplate for heat sink mounting.
MARKING CODE: FULL PART NUMBER
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