DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMSD2836
and CMSD2838 types are ultra-high speed silicon
switching diodes manufactured by the epitaxial
planar process, in an epoxy molded
SUPERminiTM surface mount package, designed
for high speed switching applications.
CMSD2836
CMSD2838
SUPERmini
TM
DUAL SILICON
SWITCHING DIODE
SOT-323 CASE
Central
Semiconductor Corp.
TM
R1 ( 30-August 2001)
MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Peak Repetitive Reverse Voltage
VRRM
75
V
Average Forward Current
IO
200
mA
Peak Forward Current
IFM
300
mA
Power Dissipation
PD
250
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
500
C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
BVR
IR=100A
75
V
IR
VR=50V
100
nA
VF
IF=10mA
1.0
V
VF
IF=50mA
1.0
V
VF
IF=100mA
1.2
V
CT
VR=0, f=1 MHz
1.5
4.0
pF
trr
IR=IF=10mA, RL=100
, Rec. to 1.0mA
4.0
ns
The following configurations are available:
CMSD2836
DUAL, COMMOM ANNODE
MARKING CODE: A2C
CMSD2838
DUAL, COMMON CATHODE
MARKING CODE: A6C
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