DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMUT5179
type is an NPN silicon RF transistor
manufactured by the epitaxial planar process,
epoxy molded in an ULTRAminiTM surface mount
package, designed for low noise, high frequency
amplifier and high output oscillator applications.
Marking code is HC7.
CMUT5179
ULTRAminiTM
SURFACE MOUNT
NPN SILICON
RF TRANSISTOR
SOT-523 CASE
Central
Semiconductor Corp.
TM
R0 ( 15-August 2001)
MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
20
V
Collector-Emitter Voltage
VCEO
15
V
Emitter-Base Voltage
VEBO
2.5
V
Collector Current
IC
50
mA
Power Dissipation
PD
250
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
500
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICBO
VCB=15V
20
nA
BVCBO
IC=10A
20
V
BVCEO
IC=3.0mA
15
V
BVEBO
IE=10A
2.5
V
VCE(SAT)
IC=10mA, IB=1.0mA
0.4
V
VBE(SAT)
IC=10mA, IB=1.0mA
1.0
V
hFE
VCE=1.0V, IC=3.0mA
25
fT
VCE=6.0V, IC=5.0mA, f=100MHz
900
1450
MHz
Ccb
VCB=10V, IE=0, f=0.1 to 1.0MHz
1.0
pF
hfe
VCE=6.0V, IC=2.0, f=1.0kHz
25
Gpe
VCE=6.0V, IC=5.0mA, f=200MHz
15
dB
NF
VCE=6.0V, IC=1.5mA, RS=50
, f=200MHz
4.5
dB
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