Central
Semiconductor Corp.
TM
PROCESS
CP191
Small Signal Transistor
NPN - Amp/Switch Transistor Chip
PRINCIPAL DEVICE TYPES
2N2219A
2N2222A
CMPT2222A
CMST2222A
CXT2222A
CZT2222A
MD2219A
PN2222A
Process
EPITAXIAL PLANAR
Die Size
16.5 x 16.5 MILS
Die Thickness
9.0 MILS
Base Bonding Pad Area
3.5 x 4.3 MILS
Emitter Bonding Pad Area
3.5 x 4.3 MILS
Top Side Metalization
Al - 30,000
Back Side Metalization
Au - 18,000
PROCESS DETAILS
GEOMETRY
BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R2 (1 -August 2002)
GROSS DIE PER 4 INCH WAFER
41,690
Central
Semiconductor Corp.
TM
Central
Semiconductor Corp.
TM
PROCESS
CP191
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R2 (1 -August 2002)
Central
Semiconductor Corp.
TM
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