145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
PRINCIPAL DEVICE TYPES
CZT3120
B
E
R1
BACKSIDE COLLECTOR
GEOMETRY
PROCESS DETAILS
R3 (26-March 2004)
Process
EPITAXIAL PLANAR
Die Size
70 x 70 MILS
Die Thickness
9.0 MILS
Base Bonding Pad Area
11.4 x 18 MILS
Emitter Bonding Pad Area
13.7 x 23.6 MILS
Top Side Metalization
Al - 30,000
Back Side Metalization
Ti / Ni / Ag 11,300
GROSS DIE PER 4 INCH WAFER
2,200
Central
Semiconductor Corp.
TM
PROCESS
CP312
Power Transistor
NPN - Amp/Switch Transistor Chip
Central
Semiconductor Corp.
TM
PROCESS
CP312
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R3 (26-March 2004)
PDF 
ZIP