145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com

PROCESS

CP392

Small Signal Transistor

NPN - Amp/Switch Transistor Chip

PRINCIPAL DEVICE TYPES

2N3904
CMKT3904
CMLT3904E
CMPT3904
CMPT3904E
CMST3904
CXT3904
CZT3904

GEOMETRY

PROCESS DETAILS

BACKSIDE COLLECTOR

R0 (06 -April 2004)

Process

EPITAXIAL PLANAR

Die Size

11 x 11 MILS

Die Thickness

7.0 MILS

Base Bonding Pad Area

3.7 x 3.7 MILS

Emitter Bonding Pad Area

3.7 x 3.7 MILS

Top Side Metalization

Al - 30,000�

Back Side Metalization

Au - 18,000�

GROSS DIE PER 4 INCH WAFER

93,826