145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
PRINCIPAL DEVICE TYPES
1N645 thru 1N649
CBRHD-02 Series
GEOMETRY
PROCESS DETAILS
BACKSIDE CATHODE
R2 (16- September 2003)
Process
GLASS PASSIVATED MESA
Die Size
25 x 25 MILS
Die Thickness
9.5 MILS
Anode Bonding Pad Area
14.5 x 14.5 MILS
Top Side Metalization
Au - 5,000
Back Side Metalization
Au - 2,000
GROSS DIE PER 4 INCH WAFER
18,080
Central
Semiconductor Corp.
TM
PROCESS
CPD04
General Purpose Rectifier
500 mA Glass Passivated Rectifier Chip
Central
Semiconductor Corp.
TM
PROCESS
CPD04
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R2 (16- September 2003)
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