PROCESS
CPD96V
Schottky Diode
500mA Low VF Schottky Diode Chip
PRINCIPAL DEVICE TYPES
CMLSH05-4
Process
EPITAXIAL PLANAR
Die Size
20 x 20 MILS
Die Thickness
7.1 MILS
Anode Bonding Pad Area
16 x 16 MILS
Top Side Metalization
Al - 20,000
Back Side Metalization
Au - 12,000
PROCESS DETAILS
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel:
(631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
ANODE
R0
GEOMETRY
R3 (15-March 2006)
GROSS DIE PER 4 INCH WAFER
28,028
BACKSIDE CATHODE
Central
Semiconductor Corp.
TM
Central
Semiconductor Corp.
TM
PROCESS
CPD96V
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R3 (15-March 2006)
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ZIP