145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com

PROCESS

CPS041

Silicon Controlled Rectifier

Sensitive Gate SCR Chip

PRINCIPAL DEVICE TYPES

CS18D

BRX49

CS92D

CS89M

GEOMETRY

PROCESS DETAILS

R1 (19 -May 2005)

Process

GLASS PASSIVATED MESA

Die Size

41 x 41 MILS

Die Thickness

8.7 MILS � 0.6 MILS

Cathode Bonding Pad Area

18 x 8 MILS

Gate Bonding Pad Area

7.1 x 7.1 MILS

Top Side Metalization

Al - 45,000�

Back Side Metalization

Au - 10,000�

GROSS DIE PER 4 INCH WAFER

6,474

145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com

PROCESS

CPS041

Typical Electrical Characteristics

R1 (19 -May 2005)