PROCESS
CPS110
Silicon Controlled Rectifier
12 Amp Sensitive Gate SCR Chip
PRINCIPAL DEVICE TYPES
CS220-12M Series
CSDD-12M Series
Process
Glass Passivated Mesa
Die Size
110 x 110 MILS
Die Thickness
8.7 MILS
Cathode Bonding Pad Area
80 x 40 MILS
Gate Bonding Pad Area
31 x 31 MILS
Top Side Metalization
Al - 45,000
Back Side Metalization
Al/Mo/Ni/Ag - 32,000
PROCESS DETAILS
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel:
(631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
GEOMETRY
R0 (4- January 2006)
GROSS DIER PER 4 INCH WAFER
876
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