(SEE REVERSE SIDE)
R3
BCY78, VII, VIII, IX, X
BCY79, VII, VIII, IX, X
PNP SILICON TRANSISTOR
JEDEC TO-18 CASE
DATA SHEET
DESCRIPTION
The CENTRAL SEMICONDUCTOR BCY78, BCY79 Series types are Silicon PNP Epitaxial Planar Transistors,
mounted in a hermetically sealed metal case, designed for low noise amplifier and switching applications.
MAXIMUM RATINGS (TA=25C unless otherwise noted)
SYMBOL BCY78
BCY79
UNITS
Collector-Base Voltage
VCBO 32
45
V
Collector-Emitter Voltage
VCEO
32
45
V
Emitter-Base Voltage
VEBO
5.0
V
Collector Current
IC
100
mA
Collector Current (Peak)
ICM
200
mA
Base Current (Peak)
IBM
200
mA
Power Dissipation
PD
340
mW
Power Dissipation(TC=25C)
PD
1.0
W
Operating and Storage
Junction
Temperature
TJ,Tstg
-65 to +200
C
Thermal
Resistance
JA
450
C/W
Thermal
Resistance
JC
150
C/W
ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted)
SYMBOL TEST
CONDITIONS
MIN
MAX
UNITS
ICBO
VCB= Rated VCBO
15
nA
ICBO
VCB= Rated VCBO, TA=150C
10
A
IEBO
VEB=5.0V
20
nA
BVCBO
IC=10A
(BCY78)
32
V
BVCBO
IC=10A
(BCY79)
45
V
BVCEO
IC=2.0mA
(BCY78)
32
V
BVCEO
IC=2.0mA
(BCY79)
45
V
BVEBO
IE=1.0A
5.0
V
VCE(SAT)
IC=10mA, IB=250A
0.25
V
VCE(SAT)
IC=100mA, IB=2.5mA
0.80
V
VBE(SAT)
IC=10mA, IB=250A
0.60
0.85
V
VBE(SAT)
IC=100mA, IB=2.5mA
0.70
1.20
V
VBE(ON)
VCE=5.0V, IC=2.0mA
0.60
0.75
V
BCY78-VII
BCY78-VIII
BCY78-IX
BCY78-X
BCY79-VII
BCY79-VIII
BCY79-IX
BCY79-X
SYMBOL TEST
CONDITIONS
MIN MAX MIN MAX MIN MAX MIN MAX
hFE
VCE=5.0V, IC=10A
140 TYP
30
40
100
hFE
VCE=5.0V, IC=2.0mA
120 220 180 310 250 460 380 630
hFE
VCE=1.0V, IC=10mA
80
120 400 160 630 240 1000
hFE
VCE=1.0V, IC=100mA
40
45
60
60
BCY78/BCY79
PNP
SILICON
TRANSISTOR
ELECTRICAL CHARACTERISTICS Continued
SYMBOL TEST
CONDITIONS
MIN TYP MAX
UNITS
fT
VCE=5.0V, IC=10mA,
f=100MHz 100
MHz
Cob
VCB=10V, IE=0,
f=1.0MHz
7.0
pF
Cib
VEB=0.5V, IC=0, f=1.0MHz
15
pF
NF
VCE=5.0V, IC=200A, RS=2k
, f=1.0kHz, B=200Hz
10
dB
ton
VCC=3.0V, IC=10mA, IB1=-IB2=1.0mA
100
ns
td
VCC=3.0V, IC=10mA, IB1=-IB2=1.0mA
50
ns
tr
VCC=3.0V, IC=10mA, IB1=-IB2=1.0mA
50
ns
toff
VCC=3.0V, IC=10mA, IB1=-IB2=1.0mA
700
ns
ts
VCC=3.0V, IC=10mA, IB1=-IB2=1.0mA
600
ns
tf
VCC=3.0V, IC=10mA, IB1=-IB2=1.0mA
100
ns
ton
VCC=10V, IC=100mA, IB1=-IB2=10mA
100
ns
td
VCC=10V, IC=100mA, IB1=-IB2=10mA
35
ns
tr
VCC=10V, IC=100mA, IB1=-IB2=10mA
65
ns
toff
VCC=10V, IC=100mA, IB1=-IB2=10mA
400
ns
ts
VCC=10V, IC=100mA, IB1=-IB2=10mA
300
ns
tf
VCC=10V, IC=100mA, IB1=-IB2=10mA
100
ns
TO-18 PACKAGE - MECHANICAL OUTLINE
R1
B
D
C
E
F
LEAD #1
LEAD #2
LEAD #3
G
H
I
J
A
45
Lead Code
1. Emitter
2. Base
3.
Collector
MIN
MAX
MIN
MAX
A (DIA)
0.209
0.230
5.31
5.84
B (DIA)
0.178
0.195
4.52
4.95
C
-
0.030
-
0.76
D
0.170
0.210
4.32
5.33
E
0.500
-
12.70
-
F (DIA)
0.016
0.019
0.41
0.48
G (DIA)
H
I
0.036
0.046
0.91
1.17
J
0.028
0.048
0.71
1.22
TO-18 (REV: R1)
DIMENSIONS
SYMBOL
INCHES
MILLIMETERS
0.100
2.54
0.050
1.27
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