CQ223-2M
CQ223-2N
2.0 AMP TRIAC
600 THRU 800 VOLTS
SOT-223 CASE
Central
Semiconductor Corp.
TM
R0 (11-May 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQ223-2M
series type is an Epoxy Molded Silicon Triac
designed for full wave AC control applications
featuring gate triggering in all four (4) quadrants.
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25C unless otherwise noted)
SYMBOL
CQ223
CQ223
-2M
-2N
UNITS
Peak Repetitive Off-State Voltage
VDRM
600
800
V
RMS On-State Current (TC=80C)
IT(RMS)
2.0
A
Peak One Cycle Surge (t=10ms)
ITSM
20
A
I
2
t Value for Fusing (t=10ms)
I
2
t
2.0
A
2
s
Peak Gate Power (tp=10s)
PGM
3.0
W
Average Gate Power Dissipation
PG(AV)
0.2
W
Peak Gate Current (tp=10s)
IGM
1.2
A
Storage Temperature
Tstg
-40 to +150
C
Junction Temperature
TJ
-40 to +125
C
Thermal Resistance
JA
62.5
C/W
ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IDRM
Rated VDRM, RGK=1K
5.0
A
IDRM
Rated VDRM, RGK=1K, TC=125C
200
A
IGT
VD=12V, QUAD I, II, III
1.35
5.00
mA
IGT
VD=12V, QUAD IV
3.75
8.00
mA
IH
RGK=1K
1.2
5.0
mA
VGT
VD=12V, QUAD I, II, III, IV
1.1
1.8
V
VTM
ITM=2.0A, tp=380s
1.50
1.75
V
VTM
ITM=3.0A, tp=380s
1.7
2.0
V
dv/dt
VD=
2
/
3
VDRM, TC=125C
2.5
V/s
MIN
MAX
MIN
MAX
A
0
10
0
10
B
0.059
0.071
1.50
1.80
C
0.018
---
0.45
---
D
0.000
0.004
0.00
0.10
E
F
0.009
0.014
0.23
0.35
G
0.248
0.264
6.30
6.70
H
0.114
0.122
2.90
3.10
I
0.130
0.146
3.30
3.70
J
0.264
0.287
6.70
7.30
K
0.024
0.033
0.60
0.85
L
M
SOT-223 (REV: R3)
15
0.091
0.181
4.60
2.30
15
DIMENSIONS
SYMBOL
MILLIMETERS
INCHES
Central
Semiconductor Corp.
TM
SOT-223 CASE - MECHANICAL OUTLINE
CQ223-2M
CQ223-2N
2.0 AMP TRIAC
600 THRU 800 VOLTS
R0 (11-May 2004)
LEAD CODE:
1) MT1
2) MT2
3) GATE
4) MT2
MARKING CODE:
FULL PART NUMBER
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