CQ39BS
CQ39DS
CQ39MS
CQ39NS
TRIAC
4.0 AMP, 200 THRU 800 VOLTS
TO-39 CASE
Central
Semiconductor Corp.
TM
R1 (18-August 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQ39BS
series type is a hermetically sealed silicon Triac
designed for full wave AC control applications
featuring gate triggering in all four (4) quadrants.
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25C unless otherwise noted)
SYMBOL
CQ39BS CQ39DS CQ39MS CQ39NS
UNITS
Peak Repetitive Off-State Voltage
VDRM
200
400
600
800
V
RMS On-State Current (TC=80C)
IT(RMS)
4.0
A
Peak One Cycle Surge (t=10ms)
ITSM
35
A
I
2
t Value for Fusing (t=10ms)
I
2
t
2.0
A
2
s
Peak Gate Power (tp=10s)
PGM
3.0
W
Average Gate Power Dissipation
PG(AV)
0.2
W
Peak Gate Current (tp=10s)
IGM
1.2
A
Storage Temperature
Tstg
-40 to +150
C
Junction Temperature
TJ
-40 to +125
C
Thermal Resistance
JA
160
C/W
Thermal Resistance
JC
9.0
C/W
ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IDRM
Rated VDRM, RGK=1K
10
A
IDRM
Rated VDRM, RGK=1K, TC=125C
200
A
IGT
VD=12V, QUAD I, II, III
2.5
5.0
mA
IGT
VD=12V, QUAD IV
5.5
9.0
mA
IH
RGK=1K
1.6
5.0
mA
VGT
VD=12V, QUAD I, II, III, IV
2.0
V
VTM
ITM=6.0A, tp=380s
1.75
V
dv/dt
VD=
2
/
3
VDRM, TC=125C
11
V/s
MIN
MAX
MIN
MAX
A (DIA)
0.335 0.370
8.51
9.40
B (DIA)
0.315 0.335
8.00
8.51
C
-
0.040
-
1.02
D
0.240 0.260
6.10
6.60
E
0.500
-
12.70
-
F (DIA)
0.016 0.021
0.41
0.53
G (DIA)
H
I
0.028 0.034
0.71
0.86
J
0.029 0.045
0.74
1.14
TO-39 (REV: R1)
0.200
0.100
5.08
2.54
DIMENSIONS
SYMBOL
INCHES
MILLIMETERS
Central
Semiconductor Corp.
TM
TO-39 CASE - MECHANICAL OUTLINE
CQ39BS
CQ39DS
CQ39MS
CQ39NS
TRIAC
4.0 AMP, 200 THRU 800 VOLTS
R1 (18-August 2004)
LEAD CODE:
1) MT1
2) GATE
3) MT2
MARKING CODE:
FULL PART NUMBER
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