CQDD-16M
CQDD-16N
16 AMP TRIAC
600 THRU 800 VOLTS
D
2
PAK CASE
Central
Semiconductor Corp.
TM
R1 (24-September 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQDD-16M
series type is an Epoxy Molded Silicon Triac
designed for full wave AC control applications
featuring gate triggering in all four (4) quadrants.
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25C unless otherwise noted)
SYMBOL
CQDD
CQDD
-16M
-16N
UNITS
Peak Repetitive Off-State Voltage
VDRM
600
800
V
RMS On-State Current (TC=90C)
IT(RMS)
16
A
Peak One Cycle Surge (t=8.3ms)
ITSM
110
A
I
2
t Value for Fusing (t=8.3ms)
I
2
t
50
A
2
s
Peak Gate Power (tp=10s)
PGM
40
W
Average Gate Power Dissipation
PG (AV)
1.0
W
Peak Gate Current (tp=10s)
IGM
6.0
A
Peak Gate Voltage (tp=10s)
VGM
16
V
Critical Rate of Rise of On-State Current
Repetitive (f=60Hz)
di/dt
10
A/s
Storage Temperature
Tstg
-40 to +150
C
Junction Temperature
TJ
-40 to +125
C
Thermal Resistance
JA
60
C/W
Thermal Resistance
JC
2.3
C/W
ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IDRM
Rated VDRM
10
A
IDRM
Rated VDRM, TC=125C
2.0
mA
IGT
VD=12V, RL=10, QUAD I, II, III
10.9
25
mA
IGT
VD=12V, RL=10, QUAD IV
55.2
75
mA
IH
IT=100mA
9.8
25
mA
VGT
VD=12V, RL=10, QUAD I, II, III
0.97
1.50
V
VGT
VD=12V, RL=10, QUAD IV
1.51
2.50
V
VTM
ITM=22.5A, tp=380s
1.35
1.60
V
dv/dt
VD=
2
/
3
VDRM, RGK=, TC=125C
10
V/s
MIN
MAX
MIN
MAX
A
0.163 0.189
4.14
4.80
B
0.045 0.055
1.14
1.40
C
0.000 0.010
0.00
0.25
D
0.012 0.028
0.30
0.70
E
0.386 0.409
9.80
10.40
F
0.378 0.417
9.60
10.60
G
0.335 0.358
8.50
9.10
H
0.197 0.236
5.00
6.00
J
0.093 0.108
2.35
2.75
K
0.030 0.035
0.75
0.90
D2PAK (REV: R2)
DIMENSIONS
SYMBOL
INCHES
MILLIMETERS
Central
Semiconductor Corp.
TM
D
2
PAK CASE - MECHANICAL OUTLINE
CQDD-16M
CQDD-16N
16 AMP TRIAC
600 THRU 800 VOLTS
R1 (24-September 2004)
LEAD CODE:
1) MT1
2) MT2
3) GATE
4) MT2
MARKING CODE:
FULL PART NUMBER
PDF 
ZIP