CS220-12B
CS220-12D
CS220-12M
CS220-12N
CS220-12P
SILICON CONTROLLED RECTIFIER
12 AMP, 200 THRU 1000 VOLTS
JEDEC TO-220AB CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR CS220-12B series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit
applications and control systems.
MAXIMUM RATINGS (TC = 25
o
C unless otherwise noted)
CS220
CS220
CS220
CS220
CS220
UNITS
SYMBOL
-12B
-12D
-12M
-12N
-12P
Peak Repetitive Off-State Voltage
VDRM, VRRM
200
400
600
800
1000
V
RMS On-State Current (TC = 90
o
C)
IT(RMS)
12
A
Peak One Cycle Surge (t = 10ms)
ITSM
120
A
I2t Value for Fusing (t = 10ms)
I2t
72
A2s
Peak Gate Power (tp = 10
s)
PGM
40
W
Average Gate Power Dissipation
PG(AV)
1.0
W
Peak Forward Gate Current (tp = 10
s)
IFGM
4.0
A
Peak Forward Gate Voltage (tp =10
s)
VFGM
16
V
Peak Reverse Gate Voltage (tp =10
s)
VRGM
5.0
V
Critical Rate of Rise of On-State Current
di/dt
100
A/
s
Storage Temperature
Tstg
-40 to +150
o
C
Junction Temperature
TJ
-40 to +125
o
C
Thermal Resistance
J-A
60
o
C/W
Thermal Resistance
J-C
2.5
o
C/W
ELECTRICAL CHARACTERISTICS (TC = 25
o
C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IDRM, IRRM
Rated VDRM, VRRM
0.01
mA
IDRM, IRRM
Rated VDRM, VRRM, TC = 125
o
C
3.00
mA
IGT
VD = 12V, RL = 33
15
mA
IH
IT = 100mA
30
mA
VGT
VD = 12V, RL = 33
1.50
V
VTM
ITM = 24A, tp = 10ms
1.60
V
dv/dt
VD = .67 x VDRM, TC = 125
o
C
200
V/
s
R2 ( 30-November 2001)
145 Adams Avenue, Hauppauge, NY 11788 USA
Tel: (631) 435-1110 Fax: (631) 435-1824
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