MAXIMUM RATINGS (TA=25C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
75
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
600
mA
Power Dissipation
PD
1.2
W
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
104
C/W
ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=60V
10
nA
ICBO
VCB=60V, TA=125C
10
A
IEBO
VEB=3.0V 10
nA
ICEV
VCE=60V, VEB=3.0V
10
nA
BVCBO
IC=10
A
75
V
BVCEO
IC=10mA
40
V
BVEBO
IE=10
A
6.0
V
VCE(SAT)
IC=150mA, IB=15mA
0.3
V
VCE(SAT)
IC=500mA, IB=50mA
1.0
V
VBE(SAT)
IC=150mA, IB=15mA
0.6
1.2
V
VBE(SAT)
IC=500mA, IB=50mA
2.0
V
hFE
VCE=10V, IC=0.1mA
35
hFE
VCE=10V, IC=1.0mA
50
hFE
VCE=10V, IC=10mA
75
hFE
VCE=10V, IC=150mA
100
300
hFE
VCE=1.0V, IC=150mA
50
hFE
VCE=10V, IC=500mA
40
fT
VCE=20V, IC=20mA, f=100MHz
300
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
8.0
pF
Cib
VEB=0.5V, IC=0, f=1.0MHz
25
pF
CXT2222A
SURFACE MOUNT
NPN SILICON TRANSISTOR
SOT-89 CASE
Central
Semiconductor Corp.
TM
R3 ( 19-December 2001)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT2222A
type is an NPN silicon transistor manufactured by
the epitaxial planar process, epoxy molded in a
surface mount package, designed for small signal
general purpose and switching applications.
A
C
E
G
F
H
J
K
M
L
B
R3
1
3
2
Central
Semiconductor Corp.
TM
SOT-89 CASE - MECHANICAL OUTLINE
CXT2222A
SURFACE MOUNT
NPN SILICON TRANSISTOR
R3 ( 19-December 2001)
LEAD CODE:
1) EMITTER
2) COLLECTOR
3) BASE
ELECTRICAL CHARACTERISTICS (Continued)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
hie
VCE=10V, IC=1.0mA, f=1.0kHz
2.0
8.0
k
hie
VCE=10V, IC=10mA, f=1.0kHz
0.25
1.25
k
hre
VCE=10V, IC=1.0mA, f=1.0kHz
8.0
x10-4
hre
VCE=10V, IC=10mA, f=1.0kHz
4.0
x10-4
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
50
300
hfe
VCE=10V, IC=10mA, f=1.0kHz
75
375
hoe
VCE=10V, IC=1.0mA, f=1.0kHz
5.0
35
mhos
hoe
VCE=10V, IC=10mA, f=1.0kHz
25
200
mhos
rb'Cc
VCB=10V, IE=20mA, f=31.8MHz
150
ps
NF
VCE=10V, IC=100
A, RS=1.0k
,
f=1.0kHz 4.0
dB
td
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA
10
ns
tr
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA
25
ns
ts
VCC=30V, IC=150mA, IB1=IB2=15mA
225
ns
tf
VCC=30V, IC=150mA, IB1=IB2=15mA
60
ns
BOTTOM VIEW
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