MAXIMUM RATINGS (TA=25C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
140
V
Collector-Emitter Voltage
VCEO
80
V
Emitter-Base Voltage
VEBO
7.0
V
Collector Current
IC
1.0
A
Collector Current (Peak)
ICM
1.5
A
Power Dissipation
PD
1.2
W
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
104
C/W
ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=90V
10
nA
IEBO
VEB=5.0V
10
nA
BVCBO
IC=100
A
140
V
BVCEO
IC=30mA
80
V
BVEBO
IE=100
A
7.0
V
VCE(SAT)
IC=150mA, IB=15mA
0.2
V
VCE(SAT)
IC=500mA, IB=50mA
0.5
V
VBE(SAT)
IC=150mA, IB=15mA
1.1
V
hFE
VCE=10V, IC=0.1mA
50
hFE
VCE=10V, IC=10mA
90
hFE
VCE=10V, IC=150mA
100
300
hFE
VCE=10V, IC=500mA
50
hFE
VCE=10V, IC=1.0A
15
CXT3019
SURFACE MOUNT
NPN SILICON TRANSISTORS
SOT-89 CASE
Central
Semiconductor Corp.
TM
R3 ( 20-December 2001)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT3019
type is an NPN silicon transistor manufactured by
the epitaxial planar process, epoxy molded in a
surface mount package, designed for high current
general purpose amplifier applications.
A
C
E
G
F
H
J
K
M
L
B
R3
1
3
2
Central
Semiconductor Corp.
TM
SOT-89 CASE - MECHANICAL OUTLINE
CXT3019
SURFACE MOUNT
NPN SILICON TRANSISTORS
R3 ( 20-December 2001)
LEAD CODE:
1) EMITTER
2) COLLECTOR
3) BASE
ELECTRICAL CHARACTERISTICS (Continued)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
fT
VCE=10V, IC=50mA, f=1.0MHz
100
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
12
pF
Cib
VEB=0.5V, IC=0, f=1.0MHz
60
pF
NF
VCE=10V, IC=100
A, RS=1k
, f=1.0kHz
4.0
dB
BOTTOM VIEW
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