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Электронный компонент: CXT853

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PRELIMINAR
Y
MAXIMUM RATINGS:
(TA=25C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
200
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
6.0
A
Power Dissipation
PD
1.2
W
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
104
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICBO
VCB=150V
10
nA
ICBO
VCB=150V, TA=100C
1.0
A
ICER
VCE=150V, RBE 1k
10
nA
IEBO
VEB=6.0V
10
nA
BVCBO
IC=100A
200
220
V
BVCER
IC=10mA, RBE 1k
200
210
V
BVCEO
IC=10mA
100
110
V
BVEBO
IE=100A
6.0
8.0
V
VCE(SAT)
IC=100mA, IB=5mA
22
50
mV
VCE(SAT)
IC=2.0A, IB=100mA
135
170
mV
VCE(SAT)
IC=5.0A, IB=500mA
340
mV
VBE(SAT)
IC=5.0A, IB=500mA
1.25
V
CXT853
SURFACE MOUNT
HIGH CURRENT
SILICON NPN TRANSISTOR
SOT-89 CASE
Central
Semiconductor Corp.
TM
R0 (1-February 2006)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT853 type is a
high current, high voltage silicon NPN transistor.
Packaged in the SOT-89 surface mount case, the
CXT853 is ideal for industrial and consumer
applications requiring high energy efficiency in a small
package.
MARKING CODE: FULL PART NUMBER
PNP complement: CXT953
PRELIMINAR
Y
FEATURES:
 Low Saturation Voltage:
VCE(SAT) = 0.340V Max @ IC = 5.0A
APPLICATIONS:
 Power Management
Motor Driving
DC/DC Converters
Switching
PRELIMINAR
Y
Central
Semiconductor Corp.
TM
SOT-89 CASE - MECHANICAL OUTLINE
CXT853
SURFACE MOUNT
HIGH CURRENT
SILICON NPN TRANSISTOR
R0 (1-February 2006)
LEAD CODE:
1) EMITTER
2) COLLECTOR
3) BASE
MARKING CODE:
CXT853
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
hFE
VCE=2.0V, IC=10mA
100
hFE
VCE=2.0V, IC=2.0A
100
200
300
hFE
VCE=2.0V, IC=4.0A
50
100
hFE
VCE=2.0V, IC=10A
20
30
fT
VCE=10V, IC=100mA, f=50MHz
190
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
38
pF