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Электронный компонент: CXT953

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PRELIMINAR
Y
MAXIMUM RATINGS:
(TA=25C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
140
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
5.0
A
Power Dissipation
PD
1.2
W
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
104
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICBO
VCB=100V
50
nA
ICBO
VCB=100V, TA=100C
1.0
A
ICER
VCE=100V, RBE 1k
50
nA
IEBO
VEB=6.0V
10
nA
BVCBO
IC=100A
140
170
V
BVCER
IC=10mA, RBE 1k
140
150
V
BVCEO
IC=10mA
100
120
V
BVEBO
IE=100A
6.0
9.0
V
VCE(SAT)
IC=100mA, IB=10mA
20
50
mV
VCE(SAT)
IC=1.0A, IB=100mA
90
120
mV
VCE(SAT)
IC=2.0A, IB=200mA
170
220
mV
VCE(SAT)
IC=4.0A, IB=400mA
320
420
mV
VBE(SAT)
IC=4.0A, IB=400mA
1.0
1.2
V
CXT953
SURFACE MOUNT
HIGH CURRENT
SILICON PNP TRANSISTOR
SOT-89 CASE
Central
Semiconductor Corp.
TM
R0 (1-February 2006)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT953 type is a
high current, high voltage silicon PNP
transistor.
Packaged in the SOT-89 surface mount case, the
CXT953 is ideal for industrial and consumer
applications requiring high energy efficiency in a small
package.
MARKING CODE: FULL PART NUMBER
NPN complement: CXT853
PRELIMINAR
Y
FEATURES:
 Low Saturation Voltage:
VCE(SAT) = 0.420V Max @ IC = 4.0A
APPLICATIONS:
 Power Management
Motor Driving
DC/DC Converters
Switching
PRELIMINAR
Y
Central
Semiconductor Corp.
TM
SOT-89 CASE - MECHANICAL OUTLINE
CXT953
SURFACE MOUNT
HIGH CURRENT
SILICON PNP TRANSISTOR
R0 (1-February 2006)
LEAD CODE:
1) EMITTER
2) COLLECTOR
3) BASE
MARKING CODE:
CXT953
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
hFE
VCE=1.0V, IC=10mA
100
hFE
VCE=1.0V, IC=1.0A
100
200
300
hFE
VCE=1.0V, IC=3.0A
50
70
hFE
VCE=1.0V, IC=4.0A
30
45
hFE
VCE=1.0V, IC=10A
15
fT
VCE=10V, IC=100mA, f=50MHz
150
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
45
pF