MAXIMUM RATINGS (TA=25C)
SYMBOL
UNITS
Collector-Emitter Voltage
VCES
60
V
Emitter-Base Voltage
VEBO
10
V
Collector Current
IC
500
mA
Power Dissipation
PD
1.2
W
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
104
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=50V
100
nA
ICES
VCE=50V
500
nA
IEBO
VEB=10V
100
nA
BVCBO
IC=100
A
60
V
BVCES
IC=100
A
60
V
VCE(SAT)
IC=100mA, IB=0.1mA
1.5
V
VBE(ON)
VCE=5.0V, IC=100mA
2.0
V
hFE
VCE=5.0V, IC=10mA
10,000
hFE
VCE=5.0V, IC=100mA
10,000
fT
VCE=50V, IC=10mA, f=100MHz
125
MHz
CXTA27
SURFACE MOUNT
NPN DARLINGTON TRANSISTOR
SOT-89 CASE
Central
Semiconductor Corp.
TM
R1 ( 19-December 2001)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXTA27 type
is a NPN Silicon Darlington Transistor manufactured
by the epitaxial planar process, epoxy molded in a
surface mount package, designed for applications
requiring extremely high gain.
A
C
E
G
F
H
J
K
M
L
B
R3
1
3
2
Central
Semiconductor Corp.
TM
SOT-89 CASE - MECHANICAL OUTLINE
CXTA27
SURFACE MOUNT
NPN DARLINGTON TRANSISTOR
R1 ( 19-December 2001)
LEAD CODE:
1) EMITTER
2) COLLECTOR
3) BASE
BOTTOM VIEW
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