CE
1N4151
CHENYI ELECTRONICS
SMALL SIGNAL SWITCHING DIODE
FEATURES
. Silicon epitaxial planar diode
. Fast swithching diodes
. 500mW power dissipation
. The diode is also available in the Mini-MELF case with the type
designation LL4151
MECHANICAL DATA
.
Case: DO-35 glass case
.
Polarity: Color brand denotes cathode end
.
Weight: Approx. 0.13gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherwise specified)
Symbol
Value
Units
Reverse voltage
V
R
50
Volts
Peak reverse voltage
V
RM
75
Volts
Average rectified current, Half wave rectification with
I
AV
150
1)
mA
Resistive load at T
A
=25 and F 50Hz
Surge forward current at t<1S and T
J
=25
I
FSM
500
Ma
Power dissipation at T
A
=25
Ptot
500
1)
Mw
Junction temperature
T
J
175
Storage temperature range
T
STG
-65 to + 175
1)Valid provided that at a distance of 8mm from case are kept at ambient temperature(DO-35)
ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherwise specified)
Symbols
Min.
Typ.
Max.
Units
Forward voltage
V
F
1
Volts
Leakage current at V
R
=50V
I
R
50
nA
at V
R
=20V, T
J
=150
I
R
50
A
Junction capacitance at V
R
=V
F
=0V
C
J
75
2
pF
Reverse breakdown voltage tested with 5 A pulse
V
(BR)R
Reverse recovery time from I
F
=10mA to I
R
=10mA to I
R
=1mA,
t
rr
4
ns
from I
F
=10mA to I
R
=1mA to I
R
=1mA, V
R
=6V.R
L
=100
t
rr
4.000
ns
Thermal resistance junction to ambient
R
JA
350
1)
K/W
Rectification efficience at f=100MHz,V
RF
=2V
0.45
1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 1 of 3
CE
1N4151
CHENYI ELECTRONICS
SMALL SIGNAL SWITCHING DIODE
RATINGS AND CHATACTERISTIC CURVES 1N4151
FIG.2-DYNAMIC FORWARD RESISTANCE
FLG.1-FORWARD CHARACTERISTICS
VERSUS FORWARD CURRENT
FIG.3-ADMISSIBLE POWER DISSIPATION
FIG.4-RELATIVE CAPACITANCE VERSUS
VERSUS AMBIENT TEMPERATURE
VOLTAGE
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 2 of 3
CE
1N4151
CHENYI ELECTRONICS
SMALL SIGNAL SWITCHING DIODE
FIG.5-RECTIFICATION EFFICIENCY MEASUREMENT
FIG.6-LEAKAGE CURRENT VERSUS JUNCTION
CIRCUIT
TEMPERATURE
FIG.7-ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 3 of 3
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