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Voltage: 11 - 100 Volts
Power: 3.0 Watt
CZRB3011 Thru CZRB3100
Features
- For surf ace mounted applications in order to
optimize board space
- Low profile package
- Built-in strain relief
- Glass passivated junction
- Low inductance
- Excellent clamping capability
- Typical I less than 1uA above 11V
D
- High temperature soldering 260C /10
seconds at terminals
- Plastic package has underwriters laboratory
flammability classification 94V-O
Mechanical data
- Case: JEDEC DO-214AA, Molded plastic
over passivated junction
- Terminals: Solder plated, solderable per MIL-
STD-750, method 2026
- Polarity: Color band denotes positive end
(cathode) except Bidirectional
- Standard Packaging: 12mm tape (EIA-481)
- Weight: 0.002 ounce, 0.064 gram
Surface Mount Zener Diode
www.comchip.com.tw
COMCHIP
COMCHIP
Maximum Ratings and Electrical Characterics
MDS0
303002A
Page 1
Rating
Symbol
Value
Units
Peak Pulse Power Dissipation (Note A)
3
Watts
Derate above 75
24
mW/C
Peak forward Surge Current 8.3ms single half s ine-wave superimposed
on rated load (JEDEC Method) (Note B)
Operating Junction and Storage Temperature Range
T
J
,T
STG
-55 to +150
C
P
D
15
Amps
Ratings at 25C ambient temperature unless otherwise specified.
I
FSM
SMB/DO-214AA
Dimensions in inches and (maillimeter)
0.008(0.20)
0.203(0.10)
0.083(2.11)
0.075(1.91)
0.096(2.44)
0.083(2.13)
0.050(1.27)
0.030(0.76)
0.155(3.94)
0.130(3.30)
0.185(4.70)
0.160(4.06)
0.012(0.31)
0.006(0.15)
0.220(5.59)
0.200(5.08)
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COMCHIP
MDS0
303002A
Page 2
Surface Mount Zener Diode
I
ZK
V
R
(Volts)
(mA)
(Ohms)
(Ohms)
(mA)
(uA)
(Volts)
Madc
Ir - mA
CZRB3011
11
68
4
700
0.25
1
8.4
225
1.82
CZRB3012
12
63
4.5
700
0.25
1
9.1
246
1.66
CZRB3013
13
58
4.5
700
0.25
0.5
9.9
208
1.54
CZRB3014
14
53
5
700
0.25
0.5
10.6
193
1.43
CZRB3015
15
50
5.5
700
0.25
0.5
11.4
180
1.33
CZRB3016
16
47
5.5
700
0.25
0.5
12.2
169
1.25
CZRB3017
17
44
6
750
0.25
0.5
13
150
1.18
CZRB3018
18
42
6
750
0.25
0.5
13.7
159
1.11
CZRB3019
19
40
7
750
0.25
0.5
14.4
142
1.05
CZRB3020
20
37
7
750
0.25
0.5
15.2
135
1.00
CZRB3022
22
34
8
750
0.25
0.5
16.7
123
0.91
CZRB3024
24
31
9
750
0.25
0.5
18.2
112
0.83
CZRB3027
27
28
10
750
0.25
0.5
20.6
100
0.74
CZRB3028
28
27
12
750
0.25
0.5
21
96
0.71
CZRB3030
30
25
16
1000
0.25
0.5
22.5
90
0.67
CZRB3033
33
23
20
1000
0.25
0.5
25.1
82
0.61
CZRB3036
36
21
22
1000
0.25
0.5
27.4
75
0.56
CZRB3039
39
19
28
1000
0.25
0.5
29.7
69
0.51
CZRB3043
43
17
33
1500
0.25
0.5
32.7
63
0.45
CZRB3047
47
16
38
1500
0.25
0.5
35.6
57
0.42
CZRB3051
51
15
45
1500
0.25
0.5
38.8
53
0.39
CZRB3056
56
13
50
2000
0.25
0.5
42.6
48
0.36
CZRB3062
62
12
55
2000
0.25
0.5
47.1
44
0.32
CZRB3068
68
11
70
2000
0.25
0.5
51.7
40
0.29
CZRB3075
75
10
85
2000
0.25
0.5
56
36
0.27
CZRB3082
82
9.1
95
3000
0.25
0.5
62.2
33
0.24
CZRB3091
91
8.2
115
3000
0.25
0.5
69.2
30
0.22
CZRB3100
100
7.5
160
3000
0.25
0.5
76
27
0.20
NOTE:
Maximum
Zener
Current I
ZM
1. Tolerance and Type Number Designation. The type numbers listed have a standard tolerance on the nominal zener voltage of 5%.
2. ZENER VOLTAGE (Vz) MEASUREMENT - guarantees the zener voltage when measured at 40 ms +- 10ms
from the diode body, and an ambient temperature of 25 C (+8C , -2C ).
3.ZENER IMPEDANCE (Zz) DERIVATION - The zener impedance is derived from the 60 cycle ac voltage, which results when an ac current having
an rms falue equal to 10% of the dc zener current (I
ZT
or I
ZK
) is superimposed on I
ZT
or I
ZK
.
4. SURGE CURRENT (Ir) NON-REPETITIVE - The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge
current of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, I
ZT
, per JEDEC standards,
however, actual device capability is as described in Figure 3.
ELECTRICAL CHARACTERISTICS
(T
A
=25C unless otherwise noted) (V
F
=1.2Volts Max, I
F
=500mA for all types.)
Device
(Note 1.)
Nominal
Zener
Voltage V
Z
@ I
ZT
(Note 2.)
Test
current
I
ZT
Maximum Zener Impedance
(Note 3.)
Leakage Current
Surge
Current
@T
A
=25C
(Note 4.)
Z
ZT
@ I
ZT
Z
ZK
@ I
ZK
I
R
Rating and Characteristic Curves (CZRB3011 Thru CZRB3100)
www.comchip.com.tw
COMCHIP
MDS0
303002A
Page 3
Surface Mount Zener Diode
30
20
10
7
5
3
2
1
0.7
0.5
0.3
0.0001 0.0002
0.0005 0.001 0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
D = 0.5
0.2
0.1
0.05
0.02
0.01
D = 0
NOTE BELOW 0.1 SECOND,
THERMAL RESPONSE
CURVE IS APPLICABLE TO
ANY LEAD LENGTH (L)
SINGLE PULSE
TJL =
JL(t)PPK
REPETITIVE PULSES
TJL =
JL(t,D)PPK
Fig. 2-TYPICAL THERMAL RESPONSE L,
1K
500
300
200
100
50
30
20
10
.1 .2 .3 5 1
2 3 5 10 20
50 100
RECTANGULAR NONREPETITIVE
WAVEFORM TJ = 25C PRIOR TO
INITIAL PULSE
P.W. PULSE WIDTH (ms)
0.1
0.05
0.03
0.02
0.01
0.005
0.003
0.002
0.001
0.0005
0.0003
0.0002
0.0001
1
2
5
10
20
50
100
200
500
1K
NOMINAL VZ (VOLTS)
Fig. 3-MAXIMUM SURGE POWER
Fig. 4-TYPICAL REVERSE LEAKAGE
8
6
4
2
0
-2
-4
3 4 6 8 10 12
RANGE
VZ, ZENER VOLTAGE @IZT (VOLTS)
200
100
50
40
30
20
10
0
20
40
60
80
100
RANGE
VZ, ZENER VOLTAGE @IZT (VOLTS)
Fig. 5 - UNITS TO 12 VOLTS
Fig. 6 - UNITS 10 TO 100 VOLTS
TRAN
SIEN
T
T
H
ERM
AL
RES
IST
ANCE
JU
NCTI
ON-
TO
-LEA
D(C
/W
)
PPK
, PE
AK S
URG
E PO
W
E
R(WA
TTS
)
IR,
REV
ERSE
LEA
DAG
E(uA
dc)
@
VR A
S
SP
ECIF
IED
IN E
LEC.
CHAR
. T
ABLE
T
E
M
PERA
TUR
E
CO
EFFI
CIEN
T(mV
/C
)
@
I
Z
T
TEM
PE
RA
T
URE
C
OEF
FICI
ENT(
mV/
C)
@
IZT
Rating and Characteristic Curves (CZRB3011 Thru CZRB3100)
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COMCHIP
MDS0
303002A
Page 4
Surface Mount Zener Diode
100
50
30
20
10
5
3
2
1
0.5
0.3
0.2
0.1
0 1 2 3 4 5 6 7 8 9 10
VZ, ZENER VOLTAGE (VOLTS)
100
50
30
20
10
5
3
2
1
0.5
0.3
0.2
0.1
0 10 20 30 40 50 60 70 80 90 100
VZ, ZENER VOLTAGE (VOLTS)
80
70
60
50
40
30
20
10
0
0 1/8 1/4 3/8 1/2 5/8 3/4 7/8 1
PRIMARY PATH OF
CONDUCTION IS THROUGH
THE CATHODE LEAD
L, LEAD LENGTH TO HEAT SINK (INCH)
TYPICAL THERMAL RESISTANCE
I
Z, Z
ENER
CUR
RENT
(mA
)
I
Z, Z
ENER
CUR
RENT
(mA
)
JUN
CTIO
N-L
EAD
THER
MA
L
RES
IST
ANCE
(C/W
)
APPLICATION NOTE:
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to
determine junction temperature under any set of
operating conditions in order to calculate its value. The
following procedure is recommended:
Lead Temperature, T
L
, should be determined from:
T
L
=
LA
P
D
+ T
A
LA
is the lead-to-ambient thermal resistance (C/W)
and PD is the power dissipation. The value for
LA
will
vary and depends on the device mounting method.
LA
is generally 30-40 C/W for the various chips and
tie points in common use and for printed circuit board
wiring.
The temperature of the lead can also be measured using
a thermocouple placed on the lead as close as possible to
the tie point. The thermal mass connected to the tie point
is normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result
of pulsed operation once steady-state conditions are
achieved. Using the measured value of T
L
, the junction
temperature may be determined by:
T
J
= T
L
+ T
JL
T
JL
is the increase in junction temperature above the
lead temperature and may be found from Figure 2 for a
train of power pulses or from Figure 10 for dc power.
T
JL
=
LA
P
D
For worst-case design, using expected limits of Iz, limits
of PD and the extremes of TJ ( T
JL
) may be estimated.
Changes in voltage, Vz, can then be found from:
V =
VZ
T
J
VZ
, the zener voltage temperature coefficient, is
found from Figures 5 and 6.
Under high power-pulse operation, the zener voltage
will vary with time and may also be affected significantly
be the zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 2 should not be used to compute surge
capability. Surge limitations are given in Figure 3. They
are lower than would be expected by considering only
junction temperature, as current crowding effects cause
temperatures to be extremely high in small spots resulting
in device degradation should the limits of Figure 3 be
exceeded.
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COMCHIP
MDS0
303002A
Page 5
Surface Mount Zener Diode
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